SQM110N0_15 datasheet(4/10 Pages) VISHAY

Part #	SQM110N0

Description	Automotive N-Channel 55 V (D-S) 175 °C MOSFET

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Manufacturer	VISHAY [Vishay Siliconix]

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SQM110N05-06L

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Vishay Siliconix

S11-2035-Rev. B, 17-Oct-11

4

Document Number: 68838

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TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)

On-Resistance vs. Junction Temperature

On-Resistance vs. Gate-to-Source Voltage

Source Drain Diode Forward Voltage

Threshold Voltage

Drain Source Breakdown vs. Junction Temperature

0.5

0.9

1.3

1.7

2.1

2.5

- 50

- 25

0

25

50

75

100

125

150

175

ID =30A

VGS =10V

T

J - Junction Temperature (°C)

0

0.01

0.02

0.03

0.04

0.05

02

4

6

8

10

TJ = 25 °C

TJ = 150 °C

V

GS - Gate-to-Source Voltage (V)

0

0.2

0.4

0.6

0.8

1.0

1.2

1

0.01

0.001

0.1

10

100

V

SD - Source-to-Drain Voltage (V)

TJ = 25 °C

TJ = 150 °C

- 1.8

- 1.4

- 1.0

- 0.6

- 0.2

0.2

0.6

- 50

- 25

0

25

50

75

100

125

150

175

ID =5mA

ID = 250 μA

T

J - Temperature (°C)

- 50

- 25

0

25

50

75

100

125

150

175

TJ - Junction Temperature (°C)

ID =10mA

55

59

63

67

71

75

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