SQM100P06-9M3L_15 datasheet(4/9 Pages) VISHAY

Part #	SQM100P06-9M3L

Description	Automotive P-Channel 60 V (D-S) 175 °C MOSFET

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SQP100P06-9m3L

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Vishay Siliconix

S14-2075-Rev. A, 03-Nov-14

4

Document Number: 62971

For technical questions, contact: automostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)

On-Resistance vs. Junction Temperature

On-Resistance vs. Gate-to-Source Voltage

Source Drain Diode Forward Voltage

Threshold Voltage

Drain Source Breakdown vs. Junction Temperature

0.5

0.8

1.1

1.4

1.7

2.0

- 50

- 25

0

25

50

75

100

125

150

175

T

J - Junction Temperature (°C)

V

GS = 4.5 V

I

D = 30 A

V

GS = 10 V

0.00

0.02

0.04

0.06

0.08

0.10

02468

10

V

GS - Gate-to-Source Voltage (V)

T

J = 150 °C

T

J = 25 °C

0.001

0.01

0.1

1

10

100

0.0

0.2

0.4

0.6

0.8

1.0

1.2

V

SD - Source-to-Drain Voltage (V)

T

J = 25 °C

T

J = 150 °C

- 0.6

- 0.3

0.0

0.3

0.6

0.9

1.2

- 50

- 25

0

25

50

75

100

125

150

175

T

J - Temperature (°C)

I

D = 250 μA

I

D = 5 mA

- 80

- 76

- 72

- 68

- 64

- 60

- 50

- 25

0

25

50

75

100

125

150

175

T

J - Junction Temperature (°C)

I

D = 10 mA

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