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PSMN3R3-80ES Datasheet(PDF) 8 Page - NXP Semiconductors |
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PSMN3R3-80ES Datasheet(HTML) 8 Page - NXP Semiconductors |
8 / 14 page PSMN3R3-80ES All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved. Product data sheet Rev. 1 — 31 October 2011 8 of 14 NXP Semiconductors PSMN3R3-80ES N-channel 80 V, 3.3 m Ω standard level MOSFET in I2PAK Fig 13. Drain-source on-state resistance as a function of drain current; typical values Fig 14. Gate charge waveform definitions Fig 15. Gate-source voltage as a function of gate charge; typical values Fig 16. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values 003aag798 0 2 4 6 8 10 12 0 2040 6080 ID (A) RDSon (m Ω) 4.5 6.0 VGS (V) = 10.0 5.0 003aaa508 VGS VGS(th) QGS1 QGS2 QGD VDS QG(tot) ID QGS VGS(pl) 003aaf609 0 2.5 5 7.5 10 0 40 80 120 160 Q G (nC) V GS (V) V DS= 16V 64V 40V 003aaf610 10 10 2 10 3 10 4 10 5 10 -1 1 10 10 2 V DS(V) C (pF) C iss C rss C oss |
Similar Part No. - PSMN3R3-80ES_15 |
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Similar Description - PSMN3R3-80ES_15 |
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