PSMN3R3-80ES

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© NXP B.V. 2011. All rights reserved.

Product data sheet

Rev. 1 — 31 October 2011

8 of 14

NXP Semiconductors

PSMN3R3-80ES

N-channel 80 V, 3.3 m

Ω standard level MOSFET in I2PAK

Fig 13. Drain-source on-state resistance as a function

of drain current; typical values

Fig 14. Gate charge waveform definitions

Fig 15. Gate-source voltage as a function of gate

charge; typical values

Fig 16. Input, output and reverse transfer capacitances

as a function of drain-source voltage; typical

values

003aag798

0

2

4

6

8

10

12

0

2040

6080

(m

Ω)

4.5

6.0

10.0

5.0

003aaa508

003aaf609

0

2.5

5

7.5

10

0

40

80

120

160

Q

V

GS

(V)

V

64V

40V

003aaf610

10

10

2

10

3

10

4

10

5

10

-1

1

10

10

2

V

C

(pF)

C

iss

C

rss

C

oss