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PSMN2R7-30BL Datasheet(PDF) 6 Page - NXP Semiconductors |
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PSMN2R7-30BL Datasheet(HTML) 6 Page - NXP Semiconductors |
6 / 15 page PSMN2R7-30BL All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved. Product data sheet Rev. 1 — 21 March 2012 6 of 15 NXP Semiconductors PSMN2R7-30BL N-channel 30 V 3.0 m Ω logic level MOSFET in D2PAK 7. Characteristics Table 7. Characteristics Tested to JEDEC standards where applicable. Symbol Parameter Conditions Min Typ Max Unit Static characteristics V(BR)DSS drain-source breakdown voltage ID =250 µA; VGS =0V; Tj = 25 °C 30 --V ID =250 µA; VGS =0V; Tj = -55 °C 27 - - V VGS(th) gate-source threshold voltage ID =1mA; VDS =VGS; Tj =25°C; see Figure 10; see Figure 11 1.3 1.7 2.15 V ID =1mA; VDS =VGS; Tj = 175 °C; see Figure 11 0.5 --V ID =1mA; VDS =VGS; Tj =-55 °C; see Figure 11 --2.45 V IDSS drain leakage current VDS =30V; VGS =0V; Tj = 25 °C - 0.3 5 µA VDS =30V; VGS =0V; Tj = 125 °C - - 100 µA IGSS gate leakage current VGS =16V; VDS =0V; Tj = 25 °C - 10 100 nA VGS =-16 V; VDS =0V; Tj = 25 °C - 10 100 nA RDSon drain-source on-state resistance VGS =4.5 V; ID =25A; Tj =25°C; see Figure 12 - 3.16 3.7 m Ω VGS =10V; ID =25A; Tj = 175 °C; see Figure 13; see Figure 12 - 4.88 5.7 m Ω VGS =10V; ID =25A; Tj = 100 °C; see Figure 13; see Figure 12 -3.6 4.2 m Ω VGS =10V; ID =25A; Tj =25°C; see Figure 12 -2.57 3 m Ω RG gate resistance f = 1 MHz - 1 - Ω Dynamic characteristics QG(tot) total gate charge ID =25A; VDS =15V; VGS =10V; see Figure 14; see Figure 15 -66 -nC ID =0A; VDS =0V; VGS =10V - 60 - nC ID =25A; VDS =15V; VGS =4.5 V; see Figure 14; see Figure 15 -32 -nC QGS gate-source charge - 12 - nC QGS(th) pre-threshold gate-source charge -6.4 -nC QGS(th-pl) post-threshold gate-source charge -5.6 -nC QGD gate-drain charge ID =25A; VDS =15V; VGS =4.5 V - 8 - nC VGS(pl) gate-source plateau voltage ID =25A; VDS =15V; see Figure 14; see Figure 15 -2.6 -V Ciss input capacitance VDS =15V; VGS = 0 V; f = 1 MHz; Tj =25°C; see Figure 16 - 3954 - pF Coss output capacitance - 822 - pF Crss reverse transfer capacitance - 356 - pF td(on) turn-on delay time VDS =12V; RL =0.5 Ω; VGS =4.5 V; RG(ext) =4.7 Ω -46 -ns |
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