PSMN2R7-30BL_15 datasheet(6/15 Pages) PHILIPS

Part #	PSMN2R7-30BL

Description	N-channel 30 V 3.0 m logic level MOSFET in D2PAK

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PSMN2R7-30BL

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Product data sheet

Rev. 1 — 21 March 2012

6 of 15

NXP Semiconductors

PSMN2R7-30BL

N-channel 30 V 3.0 m

Ω logic level MOSFET in D2PAK

7.

Characteristics

Table 7.

Characteristics

Tested to JEDEC standards where applicable.

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Static characteristics

V(BR)DSS

drain-source

breakdown voltage

ID =250 µA; VGS =0V; Tj = 25 °C

30

--V

ID =250 µA; VGS =0V; Tj = -55 °C

27

-

V

VGS(th)

gate-source threshold

voltage

ID =1mA; VDS =VGS; Tj =25°C;

see Figure 10; see Figure 11

1.3

1.7

2.15

V

ID =1mA; VDS =VGS; Tj = 175 °C;

see Figure 11

0.5

--V

ID =1mA; VDS =VGS; Tj =-55 °C;

see Figure 11

--2.45

V

IDSS

drain leakage current

VDS =30V; VGS =0V; Tj = 25 °C

-

0.3

5

µA

VDS =30V; VGS =0V; Tj = 125 °C

-

100

µA

IGSS

gate leakage current

VGS =16V; VDS =0V; Tj = 25 °C

-

10

100

nA

VGS =-16 V; VDS =0V; Tj = 25 °C

-

10

100

nA

RDSon

drain-source on-state

resistance

VGS =4.5 V; ID =25A; Tj =25°C;

see Figure 12

-

3.16

3.7

m

Ω

VGS =10V; ID =25A; Tj = 175 °C;

see Figure 13; see Figure 12

-

4.88

5.7

m

Ω

VGS =10V; ID =25A; Tj = 100 °C;

see Figure 13; see Figure 12

-3.6

4.2

m

Ω

VGS =10V; ID =25A; Tj =25°C;

see Figure 12

-2.57

3

m

Ω

RG

gate resistance

f = 1 MHz

-

1

-

Ω

Dynamic characteristics

QG(tot)

total gate charge

ID =25A; VDS =15V; VGS =10V;

see Figure 14; see Figure 15

-66

-nC

ID =0A; VDS =0V; VGS =10V

-

60

-

nC

ID =25A; VDS =15V; VGS =4.5 V;

see Figure 14; see Figure 15

-32

-nC

QGS

gate-source charge

-

12

-

nC

QGS(th)

pre-threshold

gate-source charge

-6.4

-nC

QGS(th-pl)

post-threshold

gate-source charge

-5.6

-nC

QGD

gate-drain charge

ID =25A; VDS =15V; VGS =4.5 V

-

8

-

nC

VGS(pl)

gate-source plateau

voltage

ID =25A; VDS =15V;

see Figure 14; see Figure 15

-2.6

-V

Ciss

input capacitance

VDS =15V; VGS = 0 V; f = 1 MHz;

Tj =25°C; see Figure 16

-

3954

-

pF

Coss

output capacitance

-

822

-

pF

Crss

reverse transfer

capacitance

-

356

-

pF

td(on)

turn-on delay time

VDS =12V; RL =0.5 Ω; VGS =4.5 V;

RG(ext) =4.7 Ω

-46

-ns

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