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PSMN2R0-60ES Datasheet(PDF) 6 Page - NXP Semiconductors |
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PSMN2R0-60ES Datasheet(HTML) 6 Page - NXP Semiconductors |
6 / 15 page PSMN2R0-60ES All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved. Product data sheet Rev. 02 — 19 April 2011 6 of 15 NXP Semiconductors PSMN2R0-60ES N-channel 60 V 2.2 m Ω standard level MOSFET in I2PAK 6. Characteristics Table 6. Characteristics Symbol Parameter Conditions Min Typ Max Unit Static characteristics V(BR)DSS drain-source breakdown voltage ID = 250 µA; VGS =0V; Tj = -55 °C 54 - - V ID = 250 µA; VGS =0V; Tj = 25 °C 60 --V VGS(th) gate-source threshold voltage ID =1mA; VDS =VGS; Tj =-55 °C; see Figure 10 --4.6 V ID =1mA; VDS =VGS; Tj = 175 °C; see Figure 10 1 --V ID =1mA; VDS =VGS; Tj =25 °C; see Figure 11; see Figure 10 234V IDSS drain leakage current VDS =60V; VGS =0V; Tj = 25 °C - 0.03 10 µA VDS =60V; VGS =0V; Tj = 175 °C - - 500 µA IGSS gate leakage current VGS =-20 V; VDS =0V; Tj = 25 °C - - 100 nA VGS =20V; VDS =0V; Tj = 25 °C - - 100 nA RDSon drain-source on-state resistance VGS =10V; ID =25A; Tj =25 °C; see Figure 12 [1] -1.8 2.2 m Ω VGS =10V; ID =25A; Tj = 175 °C; see Figure 12; see Figure 13 -4.3 5.1 m Ω VGS =10V; ID =25A; Tj = 100 °C; see Figure 12; see Figure 13 -3 3.5 m Ω RG gate resistance f = 1 MHz - 0.9 - Ω Dynamic characteristics QG(tot) total gate charge ID =75A; VDS =30V; VGS =10V; see Figure 14; see Figure 15 - 137 - nC ID =0A; VDS =0V; VGS =10 V; see Figure 14; see Figure 15 - 129 - nC QGS gate-source charge ID =75A; VDS =30V; VGS =10V - 48 - nC QGS(th) pre-threshold gate-source charge ID =75A; VDS =30V; VGS =10V; see Figure 14; see Figure 15 -29 - nC QGS(th-pl) post-threshold gate-source charge -19 - nC QGD gate-drain charge - 32 - nC VGS(pl) gate-source plateau voltage VDS =30V; see Figure 14; see Figure 15 -5.7 -V Ciss input capacitance VDS =30V; VGS = 0 V; f = 1 MHz; Tj =25 °C; see Figure 16 - 9997 - pF Coss output capacitance - 1210 - pF Crss reverse transfer capacitance - 594 - pF td(on) turn-on delay time VDS =30V; RL =0.4 Ω; VGS =10V; RG(ext) =4.7 Ω; ID =75A -42 - ns tr rise time - 56 - ns td(off) turn-off delay time - 115 - ns tf fall time - 49 - ns |
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