PSMN2R0-60ES

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Product data sheet

Rev. 02 — 19 April 2011

6 of 15

NXP Semiconductors

PSMN2R0-60ES

N-channel 60 V 2.2 m

Ω standard level MOSFET in I2PAK

6.

Characteristics

Table 6.

Characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Static characteristics

drain-source breakdown

voltage

54

-

-

V

60

--V

gate-source threshold voltage

see Figure 10

--4.6

V

see Figure 10

1

--V

see Figure 11; see Figure 10

234V

drain leakage current

-

0.03

10

µA

-

-

500

µA

gate leakage current

-

-

100

nA

-

-

100

nA

drain-source on-state

resistance

see Figure 12

[1]

-1.8

2.2

m

Ω

see Figure 12; see Figure 13

-4.3

5.1

m

Ω

see Figure 12; see Figure 13

-3

3.5

m

Ω

gate resistance

f = 1 MHz

-

0.9

-

Ω

Dynamic characteristics

total gate charge

see Figure 14; see Figure 15

-

137

-

nC

see Figure 14; see Figure 15

-

129

-

nC

gate-source charge

-

48

-

nC

pre-threshold gate-source

charge

see Figure 14; see Figure 15

-29

-

nC

post-threshold gate-source

charge

-19

-

nC

gate-drain charge

-

32

-

nC

gate-source plateau voltage

see Figure 15

-5.7

-V

input capacitance

-

9997

-

pF

output capacitance

-

1210

-

pF

reverse transfer capacitance

-

594

-

pF

turn-on delay time

-42

-

ns

rise time

-

56

-

ns

turn-off delay time

-

115

-

ns

fall time

-

49

-

ns