1.

Product profile

1.1 General description

Standard level N-channel MOSFET in I2PAK (SOT226) package qualified to 175 °C. This

product is designed and qualified for use in a wide range of industrial, communications

and domestic equipment.

1.2 Features and benefits

High efficiency due to low switching

and conduction losses

Suitable for standard level gate drive

sources

1.3 Applications

DC-to-DC convertors

Load switching

Motor control

Server power supplies

1.4 Quick reference data

[1]

Continuous current is limited by package

[2]

Measured 3 mm from package.

PSMN1R5-40ES

N-channel 40 V 1.6 m

Ω standard level MOSFET in I2PAK.

Rev. 01 — 19 April 2011

Product data sheet

Table 1.

Quick reference data

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

drain-source voltage

--40

V

drain current

see Figure 1

[1]

--120

A

total power dissipation

--338

W

Static characteristics

drain-source on-state

resistance

[2]

-1.3

1.6

m

Ω

Dynamic characteristics

gate-drain charge

see Figure 15

-32

-

nC

total gate charge

-

136

-

nC