PSMN0R9-25YLC_15 datasheet(1/15 Pages) PHILIPS

Part #	PSMN0R9-25YLC

Description	N-channel 25 V 0.99 m廓 logic level MOSFET in LFPAK using NextPower technology

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1.

Product profile

1.1 General description

Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is

designed and qualified for use in a wide range of industrial, communications and domestic

equipment.

1.2 Features and benefits

 High reliability Power SO8 package,

qualified to 175°C

 Optimised for 4.5V Gate drive utilising

NextPower Superjunction technology

 Ultra low QG, QGD and QOSS for high

system efficiencies at low and high

loads

 Ultra low Rdson and low parasitic

inductance

1.3 Applications

 DC-to-DC converters

 Lithium-ion battery protection

 Load switching

 Power OR-ing

 Server power supplies

 Sync rectifier

1.4 Quick reference data

PSMN0R9-25YLC

N-channel 25 V 0.99 m

Ω logic level MOSFET in LFPAK using

NextPower technology

Rev. 2 — 4 July 2011

Product data sheet

Table 1.

Quick reference data

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

VDS

drain-source voltage

25 °C

≤ Tj ≤ 175 °C

-

25

V

ID

drain current

Tmb = 25 °C; see Figure 1

[1]

--100

A

Ptot

total power dissipation

Tmb = 25 °C; see Figure 2

--272

W

Tj

junction temperature

-55

-

175

°C

Static characteristics

RDSon

drain-source on-state

resistance

VGS = 4.5 V; ID =25A;

Tj = 25 °C; see Figure 12

-

0.95

1.25

m

Ω

VGS =10V; ID =25A;

Tj = 25 °C; see Figure 12

-

0.75

0.99

m

Ω

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PSMN0R9-25YLC Datasheet(PDF) 1 Page - NXP Semiconductors

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