9013

NPN EPITAXIAL SILICON TRANSISTOR

UNISONICTECHNOLOGIESCO.,LTD

2 of 3

www.unisonic.com.tw

QW-R201-030.C



PARAMETER

SYMBOL

RATINGS

UNIT

Collector-base voltage

40

V

Collector-emitter voltage

20

V

Emitter-base voltage

5

V

Collector current

500

mA

Collector dissipation

625

mW

Junction Temperature

125

°C

Storage Temperature

-55 ~ +150

°C

Note:

Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.



PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNIT

Collector-base breakdown voltage

40

V

Collector-emitter breakdown voltage

20

V

Emitter-base breakdown voltage

5

V

Collector cutoff current

100

nA

Emitter cutoff current

100

nA

DC current gain

64

40

120

120

300

Collector-emitter saturation voltage

0.16

0.6

V

Base-emitter saturation voltage

0.91

1.2

V

Base-emitter on voltage

0.6

0.67

0.7

V



CLASSIFICATION OF hFE1

RANK

D

E

F

G

H

I

RANGE

64-91

78-112

96-135

112-166

144-202

190-300