NX3008NBKS

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© NXP B.V. 2011. All rights reserved.

Product data sheet

Rev. 1 — 1 August 2011

9 of 17

NXP Semiconductors

NX3008NBKS

30 V, 350 mA dual N-channel Trench MOSFET

Fig 10. Transfer characteristics: drain current as a

function of gate-source voltage; typical values

Fig 11. Normalized drain-source on-state resistance as

a function of junction temperature; typical

values

(1) maximum values

(2) typical values

(3) minimum values

Fig 12. Gate-source threshold voltage as a function of

junction temperature

Fig 13. Input, output and reverse transfer capacitances

as a function of drain-source voltage; typical

values

001aao271

03

2

1

0.2

0.1

0.3

0.4

(A)

0.0

(2)

(1)

-60

180

120

060

001aao272

1.0

0.5

1.5

2.0

a

0.0

-60

180

120

060

001aao273

0.5

1.0

1.5

(V)

0.0

(2)

(1)

(3)

001aao274

10

1

10

C

(pF)

1

(1)

(2)

(3)