NX1029X

All information provided in this document is subject to legal disclaimers.

© NXP B.V. 2011. All rights reserved.

Product data sheet

Rev. 1 — 12 August 2011

3 of 20

NXP Semiconductors

NX1029X

60 / 50 V, 330 / 170 mA N/P-channel Trench MOSFET

5.

Limiting values

[1]

[2]

Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper; tin-plated and standard footprint.

[3]

Measured between all pins.

Table 5.

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit

TR2 (P-channel)

drain-source voltage

-

-50

V

gate-source voltage

-20

20

V

drain current

[1] -

-170

mA

[1] --110

mA

peak drain current

-

-0.7

A

total power dissipation

[2] -

330

mW

[1] -

390

mW

-

1090

mW

TR1 (N-channel)

drain-source voltage

-

60

V

gate-source voltage

-20

20

V

drain current

[1] -

330

mA

[1] -

210

mA

peak drain current

-

1.2

A

total power dissipation

[2] -

330

mW

[1] -

390

mW

-

1090

mW

Per device

total power dissipation

[2] -

500

mW

junction temperature

-55

150

°C

ambient temperature

-55

150

°C

storage temperature

-65

150

°C

TR1 (N-channel), Source-drain diode

source current

[2][1] -

330

mA

TR2 (P-channel), Source-drain diode

source current

[1] -

-170

mA

TR1 N-channel), ESD maximum rating

electrostatic discharge voltage

HBM

[3] -

2000

V

TR2 (P-channel), ESD maximum rating

electrostatic discharge voltage

HBM

[3] -

1000

V