IKW30N65WR5_15 datasheet(11/15 Pages) INFINEON

Part #	IKW30N65WR5

Description	Reverse conducting IGBT with monolithic body diode

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Manufacturer	INFINEON [Infineon Technologies AG]

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11

IKW30N65WR5

ReverseConductingSeries

Rev.1.3,2015-06-01

Figure 17.

IGBTtransientthermalimpedance

(D=tp/T)

tp,PULSEWIDTH[s]

1E-6

1E-5

1E-4

0.001

0.01

0.1

0.01

0.1

1

D = 0.5

0.2

0.1

0.05

0.02

0.01

single pulse

i:

ri[K/W]:

τi[s]:

1

1.2E-3

5.0E-7

2

0.026208

1.7E-5

3

0.325117

1.1E-4

4

0.273429

7.0E-4

5

0.185068

4.5E-3

Figure 18.

Diodetransientthermalimpedanceasa

functionofpulsewidth

(D=tp/T)

tp,PULSEWIDTH[s]

1E-6

1E-5

1E-4

0.001

0.01

0.1

0.01

0.1

1

D = 0.5

0.2

0.1

0.05

0.02

0.01

single pulse

i:

ri[K/W]:

τi[s]:

1

1.8E-3

6.0E-7

2

0.265343

6.3E-5

3

0.526929

4.5E-4

4

2.350517

4.8E-3

5

0.280098

0.02441

Figure 19.

Typicalreverserecoverytimeasafunction

ofdiodecurrentslope

(VR=400V)

diF/dt,DIODECURRENTSLOPE[A/µs]

500

750

1000

1250

1500

1750

2000

50

75

100

125

150

175

200

Tvj=25°C,IF=15A

Tvj=175°C,IF=15A

Figure 20.

Typicalreverserecoverychargeasa

functionofdiodecurrentslope

(VR=400V)

diF/dt,DIODECURRENTSLOPE[A/µs]

500

750

1000

1250

1500

1750

2000

0.0

0.5

1.0

1.5

2.0

2.5

3.0

Tvj=25°C,IF=15A

Tvj=175°C,IF=15A

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IKW30N65WR5 Datasheet(PDF) 11 Page - Infineon Technologies AG

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