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MX29F001T Datasheet(PDF) 4 Page - Macronix International |
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MX29F001T Datasheet(HTML) 4 Page - Macronix International |
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4 / 42 page 
4 REV. 2.6, DEC. 29, 2003 P/N: PM0515 MX29F001T/B AUTOMATIC PROGRAMMING The MX29F001T/B is byte programmable using the Au- tomatic Programming algorithm. The Automatic Program- ming algorithm does not require the system to time out or verify the data programmed. The typical chip pro- gramming time of the MX29F001T/B at room tempera- ture is less than 3.5 seconds. AUTOMATIC CHIP ERASE The entire chip is bulk erased using 10 ms erase pulses according to MXIC's Automatic Chip Erase algorithm. Typical erasure at room temperature is accomplished in less than 3 second. The Automatic Erase algorithm au- tomatically programs the entire array prior to electrical erase. The timing and verification of electrical erase are internally controlled within the device. AUTOMATIC SECTOR ERASE The MX29F001T/B is sector(s) erasable using MXIC's Auto Sector Erase algorithm. Sector erase modes allow sectors of the array to be erased in one erase cycle. The Automatic Sector Erase algorithm automatically pro- grams the specified sector(s) prior to electrical erase. The timing and verification of electrical erase are inter- nally con trolled by the device. AUTOMATIC PROGRAMMING ALGORITHM MXIC's Automatic Programming algorithm requires the user to only write program set-up commands (include 2 unlock write cycle and A0H) and a program command (program data and address). The device automatically times the programming pulse width, provides the pro- gram verification, and counts the number of sequences. A status bit similar to DATA polling and a status bit tog- gling between consecutive read cycles, provides feed- back to the user as to the status of the programming operation. AUTOMATIC ERASE ALGORITHM MXIC's Automatic Erase algorithm requires the user to write commands to the command register using stan- dard microprocessor write timings. The device will auto- matically pre-program and verify the entire array. Then the device automatically times the erase pulse width, provides the erase verification, and counts the number of sequences. A status bit toggling between consecu- tive read cycles provides feedback to the user as to the status of the programming operation. Register contents serve as inputs to an internal state- machine which controls the erase and programming cir- cuitry. During write cycles, the command register inter- nally latches addresses and data needed for the pro- gramming and erase operations. During a system write cycle, addresses are latched on the falling edge, and data are latched on the rising edge of WE . MXIC's Flash technology combines years of EPROM experience to produce the highest levels of quality, reli- ability, and cost effectiveness. The MX29F001T/B elec- trically erases all bits simultaneously using Fowler- Nordheim tunneling. The bytes are programmed by us- ing the EPROM programming mechanism of hot elec- tron injection. During a program cycle, the state-machine will control the program sequences and command register will not respond to any command set. During a Sector Erase cycle, the command register will only respond to Erase Suspend command. After Erase Suspend is completed, the device stays in read mode. After the state machine has completed its task, it will allow the command regis- ter to respond to its full command set. |
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