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PTVA047002EV Datasheet(PDF) 1 Page - Infineon Technologies AG

Part # PTVA047002EV
Description  Thermally-Enhanced High Power RF LDMOS FET
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Manufacturer  INFINEON [Infineon Technologies AG]
Direct Link  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

PTVA047002EV Datasheet(HTML) 1 Page - Infineon Technologies AG

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PTVA047002EV
All published data at TCASE = 25°C unless otherwise indicated
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet
1 of 8
Rev. 04.1, 2015-07-08
Thermally-Enhanced High Power RF LDMOS FET
700 W, 50 V, 470 – 806 MHz
Description
The PTVA047002EV LDMOS FET is designed for use in power amplifier
applications in the 470 MHz to 806 MHz frequency band. Features
include high gain and thermally-enhanced package with bolt-down flange.
Manufactured with Infineon's advanced LDMOS process, this device
provides excellent thermal performance and superior reliability.
PTVA047002EV
Package H-36275-4
Features
• Input matched
• Integrated ESD protection
• Low thermal resistance
• High gain
• Thermally enhanced package
• RoHS compliant
• Capable of withstanding a 10:1 VSWR at
130 W average power under DVB-T signal
condition
• Human Body Model Class 2 (per ANSI/ESDA/
JEDEC JS-001)
RF Characteristics
DVB-T (8K OFDM, 64QAM) Characteristics (tested in Infineon test fixture, narrowband 806 MHz)
VDD = 50 V, IDQ = 1200 mA, ƒ = 806 MHz, input PAR = 10.5 dB (unclipped), output PAR = 7.8 dB @ 0.01% CCDF probability
Characteristic
Symbol
Min
Typ
Max
Unit
Average Output Power
POUT
130
W
Gain
Gps
16.5
17.5
dB
Drain Efficiency
hD
24
29
%
Adjacent Channel Power Ratio
ACPR
–29.5
–25
dBc
(ACPR integrated over 200 KHz BW at + 4.3 MHz offset from center frequency)
14
18
22
26
30
34
450 500 550 600 650 700 750 800 850
Frequency (MHz)
DVB-T Performance
Drain Efficiency, Gain vs Frequency
VDD= 50 V, IDQ = 1.2 A, POUT = 135 W avg
Drain Efficiency
Gain
ptva047002ev_g5


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