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PTVA047002EV Datasheet(PDF) 1 Page - Infineon Technologies AG |
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PTVA047002EV Datasheet(HTML) 1 Page - Infineon Technologies AG |
1 / 8 page PTVA047002EV All published data at TCASE = 25°C unless otherwise indicated ESD: Electrostatic discharge sensitive device—observe handling precautions! Data Sheet 1 of 8 Rev. 04.1, 2015-07-08 Thermally-Enhanced High Power RF LDMOS FET 700 W, 50 V, 470 – 806 MHz Description The PTVA047002EV LDMOS FET is designed for use in power amplifier applications in the 470 MHz to 806 MHz frequency band. Features include high gain and thermally-enhanced package with bolt-down flange. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. PTVA047002EV Package H-36275-4 Features • Input matched • Integrated ESD protection • Low thermal resistance • High gain • Thermally enhanced package • RoHS compliant • Capable of withstanding a 10:1 VSWR at 130 W average power under DVB-T signal condition • Human Body Model Class 2 (per ANSI/ESDA/ JEDEC JS-001) RF Characteristics DVB-T (8K OFDM, 64QAM) Characteristics (tested in Infineon test fixture, narrowband 806 MHz) VDD = 50 V, IDQ = 1200 mA, ƒ = 806 MHz, input PAR = 10.5 dB (unclipped), output PAR = 7.8 dB @ 0.01% CCDF probability Characteristic Symbol Min Typ Max Unit Average Output Power POUT — 130 — W Gain Gps 16.5 17.5 — dB Drain Efficiency hD 24 29 — % Adjacent Channel Power Ratio ACPR — –29.5 –25 dBc (ACPR integrated over 200 KHz BW at + 4.3 MHz offset from center frequency) 14 18 22 26 30 34 450 500 550 600 650 700 750 800 850 Frequency (MHz) DVB-T Performance Drain Efficiency, Gain vs Frequency VDD= 50 V, IDQ = 1.2 A, POUT = 135 W avg Drain Efficiency Gain ptva047002ev_g5 |
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