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SQ4840EY Datasheet(PDF) 1 Page - Vishay Siliconix |
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SQ4840EY Datasheet(HTML) 1 Page - Vishay Siliconix |
1 / 11 page SQ4840EY www.vishay.com Vishay Siliconix S11-2109 Rev. D, 31-Oct-11 1 Document Number: 68669 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Automotive N-Channel 40 V (D-S) 175 °C MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Definition •TrenchFET® Power MOSFET • AEC-Q101 Qualified •100 % Rg and UIS Tested • Compliant to RoHS Directive 2002/95/EC Notes a. Pulse test; pulse width 300 μs, duty cycle 2 %. b. When mounted on 1" square PCB (FR-4 material). PRODUCT SUMMARY VDS (V) 40 RDS(on) () at VGS = 10 V 0.009 RDS(on) () at VGS = 4.5 V 0.012 ID (A) 20.7 Configuration Single N-Channel MOSFET G D S SO-8 5 6 7 8 Top View 2 3 4 1 G D S D S D S D ORDERING INFORMATION Package SO-8 Lead (Pb)-free and Halogen-free SQ4840EY-T1-GE3 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage VDS 40 V Gate-Source Voltage VGS ± 20 Continuous Drain Current TC = 25 °C ID 20.7 A TC = 125 °C 12 Continuous Source Current (Diode Conduction) IS 6.5 Pulsed Drain Currenta IDM 82 Single Pulse Avalanche Current L = 0.1 mH IAS 30 Single Pulse Avalanche Energy EAS 45 mJ Maximum Power Dissipationa TC = 25 °C PD 7.1 W TC = 125 °C 2.4 Operating Junction and Storage Temperature Range TJ, Tstg - 55 to + 175 °C THERMAL RESISTANCE RATINGS PARAMETER SYMBOL LIMIT UNIT Junction-to-Ambient PCB Mountb RthJA 85 °C/W Junction-to-Foot (Drain) RthJF 21 |
Similar Part No. - SQ4840EY_15 |
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Similar Description - SQ4840EY_15 |
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