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PSMN038-100YL Datasheet(PDF) 2 Page - NXP Semiconductors |
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PSMN038-100YL Datasheet(HTML) 2 Page - NXP Semiconductors |
2 / 13 page NXP Semiconductors PSMN038-100YL N-channel 100 V 37.5 mΩ logic level MOSFET in LFPAK56 PSMN038-100YL All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved Product data sheet 1 May 2013 2 / 13 Symbol Parameter Conditions Min Typ Max Unit Avalanche ruggedness EDS(AL)S non-repetitive drain- source avalanche energy ID = 30 A; Vsup ≤ 100 V; RGS = 50 Ω; VGS = 10 V; Tj(init) = 25 °C; unclamped; Fig. 3 - - 45.1 mJ 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 S source 2 S source 3 S source 4 G gate mb D mounting base; connected to drain mb 1 2 3 4 LFPAK56; Power- SO8 (SOT669) S D G mbb076 6. Ordering information Table 3. Ordering information Package Type number Name Description Version PSMN038-100YL LFPAK56; Power-SO8 Plastic single-ended surface-mounted package (LFPAK56; Power-SO8); 4 leads SOT669 7. Marking Table 4. Marking codes Type number Marking code PSMN038-100YL 038100 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C - 100 V VDGR drain-gate voltage RGS = 20 kΩ - 100 V VGS gate-source voltage -20 20 V ID drain current Tmb = 25 °C; VGS = 10 V; Fig. 1 - 30 A |
Similar Part No. - PSMN038-100YL_15 |
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Similar Description - PSMN038-100YL_15 |
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