NXP Semiconductors

PSMN8R5-100ES

N-channel 100 V 8.5 mΩ standard level MOSFET in I2PAK

PSMN8R5-100ES

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Product data sheet

11 October 2012

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003aak418

1

10

1

10

(A)

(1)

(2)

Fig. 3. Avalanche rating; avalanche current as a function of avalanche time

003aak419

1

10

1

10

(A)

DC

100 µs

10 ms

100 ms

1 ms

Fig. 4. Safe operating area; continuous and peak drain currents as a function of drain-source voltage

6. Thermal characteristics

Table 6.

Thermal characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

thermal resistance

from junction to

mounting base

Fig. 5

-

0.49

0.57

K/W