NXP Semiconductors

PSMN7R8-120ES

N-channel 120 V 7.9 mΩ standard level MOSFET in I2PAK

PSMN7R8-120ES

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Product data sheet

18 February 2013

7 / 13

003aak689

0

20

40

60

80

100

120

0

1

2

3

(A)

4.5

5

6

6.5

10

4

8

5.5

Fig. 6. Output characteristics: drain current as a

function of drain-source voltage; typical values

003aak688

0

10

20

30

40

0

4

8

12

16

(mΩ)

Fig. 7. Drain-source on-state resistance as a function

of gate-source voltage; typical values

003aak686

0

50

100

150

200

0

20

40

60

80

100

(S)

Fig. 8. Forward transconductance as a function of

drain current; typical values

003aak687

0

20

40

60

80

100

0

1

2

3

4

5

6

(A)

Fig. 9. Transfer characteristics: drain current as a

function of gate-source voltage; typical values