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PSMN7R6-100BSE Datasheet(PDF) 3 Page - NXP Semiconductors

Part No. PSMN7R6-100BSE
Description  N-channel 100 V 7.6 standard level MOSFET in D2PAK
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Maker  PHILIPS [NXP Semiconductors]
Homepage  http://www.nxp.com
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PSMN7R6-100BSE Datasheet(HTML) 3 Page - NXP Semiconductors

 
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NXP Semiconductors
PSMN7R6-100BSE
N-channel 100 V 7.6 mΩ standard level MOSFET in D2PAK
PSMN7R6-100BSE
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved
Product data sheet
18 December 2012
3 / 13
Symbol
Parameter
Conditions
Min
Max
Unit
VGS
gate-source voltage
-20
20
V
VGS = 10 V; Tj = 25 °C; Fig. 1
[1]
-
75
A
ID
drain current
VGS = 10 V; Tmb = 100 °C; Fig. 1
[1]
-
75
A
IDM
peak drain current
pulsed; tp ≤ 10 µs; Tmb = 25 °C; Fig. 4
-
481
A
Ptot
total power dissipation
Tmb = 25 °C; Fig. 2
-
296
W
Tstg
storage temperature
-55
175
°C
Tj
junction temperature
-55
175
°C
Tsld(M)
peak soldering temperature
-
260
°C
Source-drain diode
IS
source current
Tmb = 25 °C
[1]
-
75
A
ISM
peak source current
pulsed; tp ≤ 10 µs; Tmb = 25 °C
-
481
A
Avalanche Ruggedness
EDS(AL)S
non-repetitive drain-source
avalanche energy
VGS = 10 V; Tj(init) = 25 °C; ID = 75 A;
Vsup ≤ 100 V; RGS = 50 Ω; unclamped;
Fig. 3
-
426
mJ
[1] Continuous current limited by package
003aak744
0
30
60
90
120
150
180
0
25
50
75
100
125
150
Tj (°C)
ID
ID
(A)
(A)
(1)
(1)
(1) Capped at 75A due to package
Fig. 1. Continuous drain current as a function of
mounting base temperature
Tmb (°C)
0
200
150
50
100
03aa16
40
80
120
Pder
(%)
0
Fig. 2. Normalized total power dissipation as a
function of mounting base temperature


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