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PSMN7R6-100BSE Datasheet(PDF) 2 Page - NXP Semiconductors

Part No. PSMN7R6-100BSE
Description  N-channel 100 V 7.6 standard level MOSFET in D2PAK
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Maker  PHILIPS [NXP Semiconductors]
Homepage  http://www.nxp.com
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PSMN7R6-100BSE Datasheet(HTML) 2 Page - NXP Semiconductors

 
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NXP Semiconductors
PSMN7R6-100BSE
N-channel 100 V 7.6 mΩ standard level MOSFET in D2PAK
PSMN7R6-100BSE
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved
Product data sheet
18 December 2012
2 / 13
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Avalanche Ruggedness
EDS(AL)S
non-repetitive drain-
source avalanche
energy
VGS = 10 V; Tj(init) = 25 °C; ID = 75 A;
Vsup ≤ 100 V; RGS = 50 Ω; unclamped;
Fig. 3
-
-
426
mJ
[1] Continuous current limited by package
5. Pinning information
Table 2.
Pinning information
Pin
Symbol Description
Simplified outline
Graphic symbol
1
G
gate
2
D
drain[1]
3
S
source
mb
D
mounting base; connected to
drain
mb
1
3
2
D2PAK (SOT404)
S
D
G
mbb076
[1] It is not possible to make connection to pin 2
6. Ordering information
Table 3.
Ordering information
Package
Type number
Name
Description
Version
PSMN7R6-100BSE
D2PAK
plastic single-ended surface-mounted package (D2PAK); 3 leads
(one lead cropped)
SOT404
7. Marking
Table 4.
Marking codes
Type number
Marking code
PSMN7R6-100BSE
PSMN7R6100BSE
8. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
VDS
drain-source voltage
Tj ≥ 25 °C; Tj ≤ 175 °C
-
100
V
VDGR
drain-gate voltage
Tj ≥ 25 °C; Tj ≤ 175 °C; RGS = 20 kΩ
-
100
V


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