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PSMN7R6-100BSE Datasheet(PDF) 1 Page - NXP Semiconductors

Part No. PSMN7R6-100BSE
Description  N-channel 100 V 7.6 standard level MOSFET in D2PAK
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Maker  PHILIPS [NXP Semiconductors]
Homepage  http://www.nxp.com
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PSMN7R6-100BSE Datasheet(HTML) 1 Page - NXP Semiconductors

 
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PSMN7R6-100BSE
N-channel 100 V 7.6 mΩ standard level MOSFET in D2PAK
18 December 2012
Product data sheet
Scan or click this QR code to view the latest information for this product
1. General description
Standard level N-channel MOSFET in a D2PAK package qualified to 175 °C. Part of
NXP's "NextPower Live" portfolio, the PSMN7R6-100BSE complements the latest "hot-
swap" controllers - robust enough to withstand substantial inrush currents during turn on,
whilst offering a low RDS(on) characteristic to keep temperatures down and efficiency up in
continued use. Ideal for telecommunication systems based on a 48 V backplane / supply
rail.
2. Features and benefits
Enhanced forward biased safe operating area for superior linear mode operation
Very low RDS(on) for low conduction losses
3. Applications
Electronic fuse
Hot swap
Load switch
Soft start
4. Quick reference data
Table 1.
Quick reference data
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VDS
drain-source voltage
Tj ≥ 25 °C; Tj ≤ 175 °C
-
-
100
V
ID
drain current
Tmb = 100 °C; VGS = 10 V; Fig. 1
[1]
-
-
75
A
Ptot
total power dissipation Tmb = 25 °C; Fig. 2
-
-
296
W
Static characteristics
RDSon
drain-source on-state
resistance
VGS = 10 V; ID = 25 A; Tj = 25 °C;
Fig. 12
-
6.5
7.6
Dynamic characteristics
QGD
gate-drain charge
-
41
-
nC
QG(tot)
total gate charge
VGS = 10 V; ID = 25 A; VDS = 50 V;
Fig. 14; Fig. 15
-
128
-
nC


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