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PSMN7R6-100BSE Datasheet(PDF) 6 Page - NXP Semiconductors

Part No. PSMN7R6-100BSE
Description  N-channel 100 V 7.6 standard level MOSFET in D2PAK
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Maker  PHILIPS [NXP Semiconductors]
Homepage  http://www.nxp.com
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PSMN7R6-100BSE Datasheet(HTML) 6 Page - NXP Semiconductors

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NXP Semiconductors
PSMN7R6-100BSE
N-channel 100 V 7.6 mΩ standard level MOSFET in D2PAK
PSMN7R6-100BSE
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved
Product data sheet
18 December 2012
6 / 13
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Dynamic characteristics
ID = 25 A; VDS = 50 V; VGS = 10 V;
Fig. 14; Fig. 15
-
128
-
nC
QG(tot)
total gate charge
ID = 0 A; VDS = 0 V; VGS = 10 V
-
110
-
nC
QGS
gate-source charge
-
33
-
nC
QGD
gate-drain charge
ID = 25 A; VDS = 50 V; VGS = 10 V;
Fig. 14; Fig. 15
-
41
-
nC
VGS(pl)
gate-source plateau
voltage
ID = 25 A; VDS = 50 V; Fig. 14; Fig. 15
-
5.3
-
V
Ciss
input capacitance
-
7110
-
pF
Coss
output capacitance
-
450
-
pF
Crss
reverse transfer
capacitance
VDS = 50 V; VGS = 0 V; f = 1 MHz;
Tj = 25 °C; Fig. 16
-
310
-
pF
td(on)
turn-on delay time
-
31
-
ns
tr
rise time
-
48
-
ns
td(off)
turn-off delay time
-
82
-
ns
tf
fall time
VDS = 50 V; RL = 2 Ω; VGS = 10 V;
RG(ext) = 5 Ω
-
47
-
ns
Source-drain diode
VSD
source-drain voltage
IS = 25 A; VGS = 0 V; Tj = 25 °C; Fig. 17
-
0.8
1.2
V
trr
reverse recovery time
-
69
-
ns
Qr
recovered charge
IS = 25 A; dIS/dt = -100 A/µs; VGS = 0 V;
VDS = 50 V
-
210
-
nC
003aak748
0
0.5
1
1.5
2
0
24
48
72
96
120
VDS (V)
ID
ID
(A)
(A)
4 V
4 V
4.5 V
4.5 V
5 V
5 V
5.5 V
5.5 V
6 V
6 V
6.5 V
6.5 V
7 V
7 V
8 V
8 V
10 V
10 V
Fig. 6. Output characteristics; drain current as a
function of drain-source voltage; typical values
003aak749
0
4
8
12
16
20
0
4
8
12
16
20
VGS (V)
RDSon
RDSon
Fig. 7. Drain-source on-state resistance as a function
of gate-source voltage; typical values


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