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PSMN7R6-100BSE Datasheet(PDF) 5 Page - NXP Semiconductors

Part No. PSMN7R6-100BSE
Description  N-channel 100 V 7.6 standard level MOSFET in D2PAK
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Maker  PHILIPS [NXP Semiconductors]
Homepage  http://www.nxp.com
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PSMN7R6-100BSE Datasheet(HTML) 5 Page - NXP Semiconductors

 
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NXP Semiconductors
PSMN7R6-100BSE
N-channel 100 V 7.6 mΩ standard level MOSFET in D2PAK
PSMN7R6-100BSE
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved
Product data sheet
18 December 2012
5 / 13
003aak747
10-6
10-5
10-4
10-3
10-2
10-1
1
10-3
10-2
10-1
1
tp (s)
Zth(j-mb)
Zth(j-mb)
(K/W)
(K/W)
P
t
tp
T
tp
δ = T
single shot
single shot
δ = 0.5
δ = 0.5
0.2
0.2
0.1
0.1
0.05
0.05
0.02
0.02
Fig. 5. Transient thermal impedance from junction to mounting base as a function of pulse duration
10. Characteristics
Table 7.
Characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Static characteristics
ID = 250 µA; VGS = 0 V; Tj = 25 °C
100
-
-
V
V(BR)DSS
drain-source
breakdown voltage
ID = 250 µA; VGS = 0 V; Tj = -55 °C
90
-
-
V
VGS(th)
gate-source threshold
voltage
ID = 1 mA; VDS = VGS; Tj = 25 °C;
Fig. 10; Fig. 11
2
3
4
V
ID = 1 mA; VDS = VGS; Tj = 175 °C;
Fig. 11
1
-
-
V
VGSth
gate-source threshold
voltage
ID = 1 mA; VDS = VGS; Tj = -55 °C;
Fig. 11
-
-
4.6
V
VDS = 100 V; VGS = 0 V; Tj = 25 °C
-
0.1
2
µA
IDSS
drain leakage current
VDS = 100 V; VGS = 0 V; Tj = 175 °C
-
-
500
µA
VGS = -20 V; VDS = 0 V; Tj = 25 °C
-
10
100
nA
IGSS
gate leakage current
VGS = 20 V; VDS = 0 V; Tj = 25 °C
-
10
100
nA
VGS = 10 V; ID = 25 A; Tj = 25 °C;
Fig. 12
-
6.5
7.6
VGS = 10 V; ID = 25 A; Tj = 100 °C;
Fig. 12; Fig. 13
-
-
13.7
RDSon
drain-source on-state
resistance
VGS = 10 V; ID = 25 A; Tj = 175 °C;
Fig. 12; Fig. 13
-
-
20.5
RG
gate resistance
f = 1 MHz
0.42
0.83
1.66
Ω


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