NXP Semiconductors

PSMN1R5-30BLE

N-channel 30 V 1.5 mΩ logic level MOSFET in D2PAK

PSMN1R5-30BLE

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Product data sheet

12 October 2012

5 / 13

003aaj353

single shot

0.2

0.1

0.05

1

1

(K/W)

δ = 0.5

0.02

T

P

t

T

δ =

Fig. 5. Transient thermal impedance from junction to mounting base as a function of pulse duration

7. Characteristics

Table 7.

Characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Static characteristics

27

-

-

V

drain-source

breakdown voltage

30

-

-

V

Fig. 10

0.5

-

-

V

Fig. 11; Fig. 10

1.3

1.7

2.15

V

gate-source threshold

voltage

Fig. 10

-

-

2.45

V

-

0.5

10

µA

drain leakage current

-

-

200

µA

-

10

100

nA

gate leakage current

-

10

100

nA

Fig. 12

-

1.3

1.5

mΩ

Fig. 12; Fig. 13

-

-

2.1

mΩ

Fig. 12

-

1.7

1.85

mΩ

drain-source on-state

resistance

Fig. 12; Fig. 13

-

-

2.9

mΩ