SQ1563AEH_15 datasheet(8/16 Pages) VISHAY

Part #	SQ1563AEH

Description	N-and P-Channel 20 V (D-S) 175 °C MOSFET

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Manufacturer	VISHAY [Vishay Siliconix]

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SQ1563AEH

www.vishay.com

Vishay Siliconix

S15-2107-Rev. A, 07-Sep-15

8

Document Number: 62986

For technical questions, contact: automostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

P-CHANNEL TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)

Source Drain Diode Forward Voltage

On-Resistance vs. Junction Temperature

On-Resistance vs. Gate-to-Source Voltage

Drain Source Breakdown vs. Junction Temperature

Safe Operating Area

0.001

0.01

0.1

1

10

0.0

0.2

0.4

0.6

0.8

1.0

1.2

V

SD - Source-to-Drain Voltage (V)

T

J = 25 °C

T

J = 150 °C

0.5

0.8

1.1

1.4

1.7

2.0

- 50

- 25

0

25

50

75

100

125

150

175

T

J - Junction Temperature (°C)

I

D = 0.85 A

V

GS = 4.5 V

V

GS = 2.5 V

0

1

2

3

4

5

012345

V

GS - Gate-to-Source Voltage (V)

T

J = 150 °C

T

J = 25 °C

- 25

- 24

- 23

- 22

- 21

- 20

- 50

- 25

0

25

50

75

100

125

150

175

T

J - Junction Temperature (°C)

I

D = 1 mA

0.01

0.1

1

10

0.01

0.1

1

10

100

V

DS -Drain-to-Source Voltage (V)

* V

GS > minimum VGS at which RDS(on) is specified

100 ms

Limited by R

DS(on)*

1 ms

I

DM Limited

T

C = 25 °C

Single Pulse

BVDSS Limited

10 ms

1 s, 10 s, DC

I

D Limited

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