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IPB17N25S3-100 Datasheet(PDF) 1 Page - Infineon Technologies AG |
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IPB17N25S3-100 Datasheet(HTML) 1 Page - Infineon Technologies AG |
1 / 9 page IPB17N25S3-100 IPP17N25S3-100 OptiMOS ™-T Power-Transistor Features • N-channel - Enhancement mode • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant) • 100% Avalanche tested Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Unit Continuous drain current I D T C=25 °C, V GS=10 V 17 A T C=100°C, V GS=10V 1) 13.3 Pulsed drain current 1) I D,pulse T C=25°C 68 Avalanche energy, single pulse 1) E AS I D=5.4A 54 mJ Avalanche current, single pulse I AS - 5.4 A Reverse diode dv /dt dv /dt- 6kV/µs Gate source voltage V GS -±20 V Power dissipation P tot T C=25°C 107 W Operating and storage temperature T j, T stg - -55 ... +175 °C IEC climatic category; DIN IEC 68-1 - - 55/175/56 Value VDS 250 V RDS(on),max 100 m Ω ID 17 A Product Summary PG-TO220-3-1 PG-TO263-3-2 Type Package Marking IPB17N25S3-100 PG-TO263-3-2 3N25100 IPP17N25S3-100 PG-TO220-3-1 3N25100 Rev. 1.1 page 1 2013-05-13 |
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