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IDW40G65C5B Datasheet(PDF) 7 Page - Infineon Technologies AG |
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IDW40G65C5B Datasheet(HTML) 7 Page - Infineon Technologies AG |
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7 / 11 page  5 th Generation thinQ!TM SiC Schottky Diode IDW40G65C5B Electrical characteristics diagrams 1) Per Leg 2) Per Device Final Datasheet 7 Rev. 2.0, 2015-04-13 Table 9 Typ. capacitance charge vs. current slope 1) Typ. Reverse current vs. reverse voltage 1) 0 5 10 15 20 25 30 100 300 500 700 900 dI F/dt [A/µs] 1.E-9 1.E-8 1.E-7 1.E-6 1.E-5 1.E-4 100 200 300 400 500 600 V R [V] QC=f(diF/dt); Tj=150°C; VR=400 V; IF≤IF,max IR=f(VR); parameter: Tj Table 10 Max. transient thermal impedance 1) Typ. capacitance vs. reverse voltage 1) 0.01 0.1 1 1.E-06 1.E-03 1.E+00 t p [s] 0.5 0.2 0.1 0.05 0.02 0.01 single pulse 0 100 200 300 400 500 600 700 800 0 1 10 100 1000 VR [V] Zth,jc=f(tP); parameter: D=tP/T C=f(VR); Tj=25°C; f=1 MHz -55°C 175°C 150°C 25°C 100°C |
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