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PMDPB55XP Datasheet(PDF) 4 Page - NXP Semiconductors

Part # PMDPB55XP
Description  20 V, dual P-channel Trench MOSFET
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Manufacturer  PHILIPS [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

PMDPB55XP Datasheet(HTML) 4 Page - NXP Semiconductors

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PMDPB55XP
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 3 — 4 June 2012
4 of 15
NXP Semiconductors
PMDPB55XP
20 V, dual P-channel Trench MOSFET
6.
Thermal characteristics
[1]
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2]
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm2.
IDM = single pulse
(1) tp = 10 µs
(2) tp = 100 µs
(3) DC; Tsp = 25 °C
(4) tp = 10 ms
(5) tp = 100 ms
(6) DC; Tamb = 25 °C; drain mounting pad 6 cm2
Fig 3.
Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-source
voltage
017aaa410
-1
-10-1
-10
-102
ID
(A)
-10-2
VDS (V)
-10-1
-102
-10
-1
Limit RDSon = VDS/ID
(1)
(2)
(3)
(4)
(5)
(6)
Table 6.
Thermal characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Per transistor
Rth(j-a)
thermal resistance
from junction to
ambient
in free air
[1]
-
223
256
K/W
[2]
-
93
107
K/W
in free air; t
≤ 5 s
[2]
-
5563K/W
Rth(j-sp)
thermal resistance
from junction to solder
point
in free air
-
10
15
K/W


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