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PMDPB55XP Datasheet(PDF) 4 Page - NXP Semiconductors |
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PMDPB55XP Datasheet(HTML) 4 Page - NXP Semiconductors |
4 / 15 page PMDPB55XP All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved. Product data sheet Rev. 3 — 4 June 2012 4 of 15 NXP Semiconductors PMDPB55XP 20 V, dual P-channel Trench MOSFET 6. Thermal characteristics [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm2. IDM = single pulse (1) tp = 10 µs (2) tp = 100 µs (3) DC; Tsp = 25 °C (4) tp = 10 ms (5) tp = 100 ms (6) DC; Tamb = 25 °C; drain mounting pad 6 cm2 Fig 3. Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-source voltage 017aaa410 -1 -10-1 -10 -102 ID (A) -10-2 VDS (V) -10-1 -102 -10 -1 Limit RDSon = VDS/ID (1) (2) (3) (4) (5) (6) Table 6. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit Per transistor Rth(j-a) thermal resistance from junction to ambient in free air [1] - 223 256 K/W [2] - 93 107 K/W in free air; t ≤ 5 s [2] - 5563K/W Rth(j-sp) thermal resistance from junction to solder point in free air - 10 15 K/W |
Similar Part No. - PMDPB55XP_15 |
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Similar Description - PMDPB55XP_15 |
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