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PESD5V0V1USF Datasheet(PDF) 3 Page - NXP Semiconductors

Part No. PESD5V0V1USF
Description  Very low capacitance unidirectional ESD protection diode
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Maker  PHILIPS [NXP Semiconductors]
Homepage  http://www.nxp.com
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PESD5V0V1USF Datasheet(HTML) 3 Page - NXP Semiconductors

 
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PESD5V0V1USF
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 1 — 16 July 2012
3 of 12
NXP Semiconductors
PESD5V0V1USF
Very low capacitance unidirectional ESD protection diode
5.
Limiting values
[1]
Device stressed with ten non-repetitive ESD pulses.
[2]
Measured from pin 1 to pin 2.
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
Tj
junction temperature
-
150
C
Tamb
ambient temperature
55
+150
C
Tstg
storage temperature
65
+150
C
Table 6.
ESD maximum ratings
Tamb =25 C unless otherwise specified.
Symbol Parameter
Conditions
Min
Max
Unit
VESD
electrostatic
discharge voltage
IEC 61000-4-2 (contact discharge)
[1][2] -12
kV
IEC 61000-4-2 (air discharge)
[1][2] -12
kV
machine model
[2] -
400
V
MIL-STD-883 (human body model)
-
10
kV
Table 7.
ESD standards compliance
Standard
Conditions
IEC 61000-4-2; level 4 (ESD)
> 8 kV (contact)
MIL-STD-883; class 3B (human body model)
> 8 kV
Fig 1.
ESD pulse waveform according to IEC 61000-4-2
001aaa631
IPP
100 %
90 %
t
30 ns
60 ns
10 %
tr = 0.7 ns to 1 ns


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