ISL6208C

10

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FN8395.0

November 29, 2012

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Layout Considerations

Reducing Phase Ring

The parasitic inductances of the PCB and power devices (both

upper and lower FETs) could cause increased PHASE ringing,

which may lead to voltages that exceed the absolute maximum

rating of the devices. When PHASE rings below ground, the

negative voltage could add charge to the bootstrap capacitor

through the internal bootstrap diode. Under worst-case

conditions, the added charge could overstress the BOOT and/or

PHASE pins. To prevent this from happening, the user should

perform a careful layout inspection to reduce trace inductances,

DPAK packaged MOSFETs have high parasitic lead inductances,

as opposed to SOIC-8. If higher inductance MOSFETs must be

used, a Schottky diode is recommended across the lower

MOSFET to clamp negative PHASE ring.

A good layout would help reduce the ringing on the phase and

gate nodes significantly:

• Avoid using vias for decoupling components where possible,

especially in the BOOT-to-PHASE path. Little or no use of vias

for VCC and GND is also recommended. Decoupling loops

should be short.

• All power traces (UGATE, PHASE, LGATE, GND, VCC) should be

short and wide, and avoid using vias. If vias must be used, two

or more vias per layer transition is recommended.

• Keep the SOURCE of the upper FET as close as thermally

possible to the DRAIN of the lower FET.

• Keep the connection in between the SOURCE of lower FET and

power ground wide and short.

• Input capacitors should be placed as close to the DRAIN of the

upper FET and the SOURCE of the lower FET as thermally

possible.

Note: Refer to Intersil Tech Brief TB447 for more information.

Thermal Management

For maximum thermal performance in high current, high

switching frequency applications, connecting the thermal pad of

the DFN to the power ground with multiple vias is recommended.

This heat spreading allows the part to achieve its full thermal

potential.

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Intersil Corporation is a leader in the design and manufacture of high-performance analog, mixed-signal and power management

semiconductors. The company's products address some of the fastest growing markets within the industrial and infrastructure,

personal computing and high-end consumer markets. For more information about Intersil or to find out how to become a member of

our winning team, visit our website and career page at www.intersil.com.

For a complete listing of Applications, Related Documentation and Related Parts, please see the respective product information page.

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Revision History

The revision history provided is for informational purposes only and is believed to be accurate, but not warranted. Please go to web to make sure you

have the latest revision.

DATE

REVISION

CHANGE

November 29, 2012

FN8395.0

Initial Release.