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ISL6144IVZA Datasheet(PDF) 6 Page - Intersil Corporation |
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ISL6144IVZA Datasheet(HTML) 6 Page - Intersil Corporation |
6 / 30 page 6 FN9131.7 October 6, 2011 Functional Pin Descriptions GATE This is the Gate Drive output of the external N-Channel MOSFET generated by the IC internal charge pump. Gate turn-on time is typically 1ms. VIN Input bias pin connected to the sourcing supply side (ORing MOSFET Source). Also serves as the sense pin to determine the sourcing supply voltage. The ORing MOSFET will be turned off when VIN becomes lower than VOUT by a value more than the externally set threshold. VOUT Connected to the Load side (ORing MOSFET Drain). This is the VOUT sense pin connected to the load. This is the common connection point for multiple paralleled supplies. VOUT is compared to VIN to determine when the ORing FET has to be turned off. HVREF Low side of the internal IC High Voltage Reference used by internal circuitry, also available as an external pin for additional external capacitor connection. COMP This is the high side connection for the HS Comparator trip level setting (VTH(HS)). Resistor R1, connected between COMP and VOUT along with resistor R2, provides adjustable VOUT - VIN trip level (0V to 5V). This provides flexibility to externally set the desired level depending on particular system requirement. VSET Low side connection for the HS Comparator trip level setting A second resistor R2 connected between VSET and COMP provides adjustable “VIN - VOUT” level along with R1. FAULT Open-Drain pull-down FAULT Output with internal on-chip filtering (tFLT). The ISL6144 fault detection circuitry will pull-down this pin to GND as soon as it detects a fault. Different types of faults and their detection mechanisms are discussed in more detail in the “Functional Block Description” on page 6. GND IC ground reference. Detailed Description The ISL6144 and a suitably sized N-Channel power MOSFET(s) increases power distribution efficiency and availability when replacing a power ORing diode in high current applications. Refer to “Application Considerations” on page 8 for power saving when using ISL6144 with an N-channel ORing MOSFET compared to a typical ORing diode. Functional Block Description Regulating Amplifier-Slow (Quiet) Turn-off A Hysteretic Regulating (HR) Amplifier is used for a Quiet/Slow turn-off mechanism. This slow turn-off is initiated when the sourcing power supply is turned off slowly for system diagnostics. Under normal operating conditions as VOUT pulls up to 20mV below VIN (VIN - 20mV > VOUT), the HR Amplifier regulates the gate voltage to keep the 20mV (VFWD_HR) forward voltage drop across the ORing MOSFET (Vs - Vd). This will continue until the load current exceeds the MOSFET ability to deliver the current with Vsd of 20mV. In this case, Gate will be charged to the full charge pump voltage (VGQP) to fully enhance the MOSFET. At this point, the MOSFET will be fully enhanced and behave as a constant resistor valued at the rDS(ON). Once VIN starts to drop below VOUT, regulation cannot be maintained and the output of the HR Amp is pulled high and the gate is pulled down to VIN slowly in less than a 100µs. As a result, the ORing FET is turned off, avoiding reverse current as well as voltage and current stresses on supply components. VSET Voltage (VOUT - VSET) VREF(VSET) VIN = 9V to 75V - 5.3 - V Fault Low Output Voltage VFLT_L VIN - VOUT < 0V, VGATE = VGL -- 0.5 V Fault Sink Current IFLT_SINK FAULT = VFLT_L, VIN < VOUT, VGATE = VGL 4 -- mA Fault Leakage Current IFLT_LEAK FAULT = ”VFLT_H”, VIN > VOUT, VGATE = VIN + VGQP -- 10 µA Fault Delay - Low to High tFLT GATE = VGL to FAULT = VFLT_L -120 - µs NOTES: 12. Compliance to datasheet limits is assured by one or more methods: production test, characterization and/or design. Electrical Specifications VIN = 48V, TA = -40°C to +105°C, Unless Otherwise Specified. Boldface limits apply over the operating temperature range, -40°C to +105°C. PARAMETER SYMBOL TEST CONDITIONS MIN (Note 12) TYP MAX (Note 12) UNITS ISL6144 |
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