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MBR10150CT Datasheet(PDF) 2 Page - Micro Commercial Components

Part No. MBR10150CT
Description  10 Amp High Voltage 150Volts Barrier Rectifier Power Schottky
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Maker  MCC [Micro Commercial Components]
Homepage  http://www.mccsemi.com
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MBR10150CT Datasheet(HTML) 2 Page - Micro Commercial Components

   
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MBR10150CT
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
IF(av) (A)
PF(av)(W)
δ = 0.05
δ = 0.1
δ = 0.2
δ = 0.5
δ = 1
T
δ=tp/T
tp
Fig. 1: Average forward power dissipation versus
average forward current (per diode).
0
25
50
75
100
125
150
175
0
1
2
3
4
5
6
Tamb(°C)
IF(av)(A)
Rth(j-a)=Rth(j-c)
Rth(j-a)=15°C/W
T
δ=tp/T
tp
Fig. 2: Average forward current versus ambient
temperature (
δ = 0.5, per diode).
1E-3
1E-2
1E-1
1E+0
0
10
20
30
40
50
60
70
80
t(s)
IM(A)
Tc=50°C
Tc=75°C
Tc=125°C
IM
t
δ=0.5
Fig. 3: Non repetitive surge peak forward current
versus overload duration (maximum values, per
diode).
1E-3
1E-2
1E-1
1E+0
0.0
0.2
0.4
0.6
0.8
1.0
tp(s)
Zth(j-c)/Rth(j-c)
δ = 0.5
δ = 0.2
δ = 0.1
Single pulse
T
δ=tp/T
tp
Fig. 4: Relative variation of thermal impedance
junction to case versus pulse duration (per diode).
0
25
50
75
100
125
150
1E-2
1E-1
1E+0
1E+1
1E+2
1E+3
1E+4
1E+5
VR(V)
IR(µA)
Tj=75°C
Tj=25°C
Tj=125°C
Tj=150°C
Tj=175°C
Fig. 5: Reverse leakage current versus reverse
voltage applied (typical values, per diode)
1
2
5
10
20
50
100
200
10
20
50
100
200
VR(V)
C(pF)
F=1MHz
Tj=25°C
Fig. 6: Junction capacitance versus reverse
voltage applied (typical values, per diode).
MCC


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