RB751_SER_1

© NXP B.V. 2007. All rights reserved.

Product data sheet

Rev. 01 — 21 May 2007

3 of 10

NXP Semiconductors

RB751 series

Schottky barrier single diodes

5.

Limiting values

[1]

Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard

footprint.

[2]

Reflow soldering is the only recommended soldering method.

6.

Thermal characteristics

[1]

Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.

[2]

Reflow soldering is the only recommended soldering method.

7.

Characteristics

[1]

Table 6.

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit

repetitive peak reverse

voltage

-40

V

reverse voltage

-

40

V

forward current

-

120

mA

non-repetitive peak forward

current

square wave;

-

200

mA

total power dissipation

[1]

RB751CS40

[2] -

250

mW

RB751S40

[2] -

280

mW

RB751V40

-

280

mW

junction temperature

-

150

°C

ambient temperature

−65

+150

°C

storage temperature

−65

+150

°C

Table 7.

Thermal characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

thermal resistance from

junction to ambient

in free air

[1]

RB751CS40

[2] -

-

500

K/W

RB751S40

[2] -

-

450

K/W

RB751V40

-

-

450

K/W

Table 8.

Characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

forward voltage

[1] -

-

370

mV

reverse current

-

-

0.5

µA

diode capacitance

-

2

-

pF