NXP Semiconductors

PMC85XP

30 V P-channel MOSFET with pre-biased NPN transistor

PMC85XP

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Product data sheet

15 May 2013

8 / 15

0

-2.0

-1.5

-0,5

-1.0

aaa-003662

-2

-3

-1

-4

-5

(A)

0

-4.5 V -2.5 V

-1.8 V

-1.5 V

-1.2 V

Fig. 6. Output characteristics: drain current as a

function of drain-source voltage; typical values

017aaa401

(A)

0

-0.25

-0.10

-0.50

-0.75

-0.25

(1)

(2)

(3)

(1) minimum values

(2) typical values

(3) maximum values

Fig. 7. Subthreshold drain current as a function of

gate-source voltage

0

-5

-4

-2

-3

-1

aaa-003663

100

200

300

(mΩ)

0

-1.8 V

-2.0 V

-2.5 V

-4.5 V

Fig. 8. Drain-source on-state resistance as a function

of drain current; typical values

aaa-003664

0

-6

-4

-2

200

100

300

400

(mΩ)

0

Fig. 9. Drain-source on-state resistance as a function

of gate-source voltage; typical values