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CSD97394Q4MT Datasheet(PDF) 4 Page - Texas Instruments |
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CSD97394Q4MT Datasheet(HTML) 4 Page - Texas Instruments |
4 / 22 page CSD97394Q4M SLPS542 – JANUARY 2015 www.ti.com 6 Specifications 6.1 Absolute Maximum Ratings (1) TA = 25°C (unless otherwise noted) MIN MAX UNIT VIN to PGND –0.3 30 V VSW to PGND , VIN to VSW –0.3 30 V VSW to PGND, VIN to VSW (<10 ns) –7 33 V VDD to PGND –0.3 6 V PWM, SKIP# to PGND –0.3 6 V BOOT to PGND –0.3 35 V BOOT to PGND (<10 ns) –2 38 V BOOT to BOOT_R –0.3 6 V BOOT to BOOT_R (duty cycle <0.2%) 8 V PD Power dissipation 8 W TJ Operating temperature range –40 150 °C Tstg Storage temperature range –55 150 °C (1) Stresses above those listed in Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions is not implied. Exposure to Absolute Maximum rated conditions for extended periods may affect device reliability. 6.2 ESD Ratings VALUE UNIT Human Body Model (HBM)(1) ±2000 V(ESD) Electrostatic discharge V Charged Device Model (CDM)(2) ±500 (1) JEDEC document JEP155 states that 500 V HBM allows safe manufacturing with a standard ESD control process. (2) JEDEC document JEP157 states that 250 V CDM allows safe manufacturing with a standard ESD control process. 6.3 Recommended Operating Conditions TA = 25° (unless otherwise noted) MIN MAX UNIT VDD Gate drive voltage 4.5 5.5 V VIN Input supply voltage(1) 24 V IOUT Continuous output current VIN = 12 V, VDD = 5 V, VOUT = 1.8 V, 20 A ƒSW = 500 kHz, LOUT = 0.29 µH (2) IOUT-PK Peak output current(3) 45 A ƒSW Switching frequency CBST = 0.1 µF (min) 2000 kHz On time duty cycle 85% Minimum PWM on time 40 ns Operating temperature –40 125 °C (1) Operating at high VIN can create excessive AC voltage overshoots on the switch node (VSW) during MOSFET switching transients. For reliable operation, the switch node (VSW) to ground voltage must remain at or below the Absolute Maximum Ratings. (2) Measurement made with six 10 µF (TDK C3216X5R1C106KT or equivalent) ceramic capacitors placed across VIN to PGND pins. (3) System conditions as defined in Note 2. Peak Output Current is applied for tp = 10 ms, duty cycle ≤ 1% 6.4 Thermal Information TA = 25°C (unless otherwise noted) THERMAL METRIC MIN TYP MAX UNIT RθJC Junction-to-case (top of package) thermal resistance(1) 22.8 °C/W RθJB Junction-to-board thermal resistance(2) 2.5 (1) RθJC is determined with the device mounted on a 1 inch² (6.45 cm²), 2 oz (0.071 mm thick) Cu pad on a 1.5 inch x 1.5 inch, 0.06 inch (1.52 mm) thick FR4 board. (2) RθJB value based on hottest board temperature within 1mm of the package. 4 Submit Documentation Feedback Copyright © 2015, Texas Instruments Incorporated |
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