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CSD87333Q3D Datasheet(PDF) 3 Page - Texas Instruments |
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CSD87333Q3D Datasheet(HTML) 3 Page - Texas Instruments |
3 / 24 page CSD87333Q3D www.ti.com SLPS350 – FEBRUARY 2014 5 Specifications 5.1 Absolute Maximum Ratings (1) TA = 25°C (unless otherwise noted) PARAMETER CONDITIONS MIN MAX UNIT VIN to PGND –0.8 30 V VSW to PGND 30 V Voltage Range VSW to PGND (10ns) 32 V TG to TGR –0.3 10 V BG to PGND –0.3 10 V Pulsed Current Rating, IDM 40 A Power Dissipation, PD 6 W Sync FET, ID = 19, L = 0.1mH 18 Avalanche Energy EAS mJ Control FET, ID = 19, L = 0.1mH 18 Operating Junction Temperature Range, TJ –55 150 °C (1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated is not implied. Exposure to absolute- maximum-rated conditions for extended periods may affect device reliability. 5.2 Handling Ratings PARAMETER DEFINITION MIN MAX UNIT Tstg Storage Temperature Range –55 150 °C 5.3 Recommended Operating Conditions TA = 25° (unless otherwise noted) PARAMETER CONDITIONS MIN MAX UNIT VGS Gate Drive Voltage 3.3 8 V VIN Input Supply Voltage 24 V fSW Switching Frequency CBST = 0.1 µF (min) 1500 kHz Operating Current 15 A TJ Operating Temperature 125 °C 5.4 Power Block Performance (1) TA = 25° (unless otherwise noted) PARAMETER CONDITIONS MIN TYP MAX UNIT VIN = 12 V, VGS = 5 V, VOUT = 3.3 V, PLOSS Power Loss(1) IOUT = 8 A, fSW = 500 kHz, 1.5 W LOUT = 1 µH, TJ = 25ºC IQVIN VIN Quiescent Current TG to TGR = 0 V BG to PGND = 0 V 10 µA (1) Measurement made with six 10-µF (TDK C3216X5R1C106KT or equivalent) ceramic capacitors placed across VIN to PGND pins and using a high current 5V driver IC. Copyright © 2014, Texas Instruments Incorporated Submit Documentation Feedback 3 |
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