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PSMN020-100YS Datasheet(PDF) 1 Page - NXP Semiconductors |
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PSMN020-100YS Datasheet(HTML) 1 Page - NXP Semiconductors |
1 / 14 page PSMN020-100YS N-channel 100V 20.5mΩ standard level MOSFET in LFPAK 26 March 2014 Product data sheet Scan or click this QR code to view the latest information for this product 1. General description Standard level N-channel MOSFET in LFPAK package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 2. Features and benefits • Advanced TrenchMOS provides low RDSon and low gate charge • High efficiency gains in switching power converters • Improved mechanical and thermal characteristics • LFPAK provides maximum power density in a Power SO8 package 3. Applications • DC-to-DC converters • Lithium-ion battery protection • Load switching • Motor control • Server power supplies 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C - - 100 V ID drain current Tmb = 25 °C; VGS = 10 V; Fig. 2 - - 43 A Ptot total power dissipation Tmb = 25 °C; Fig. 1 - - 106 W Tj junction temperature -55 - 175 °C Static characteristics VGS = 10 V; ID = 15 A; Tj = 100 °C; Fig. 13 - - 37 mΩ RDSon drain-source on-state resistance VGS = 10 V; ID = 15 A; Tj = 25 °C; Fig. 14 - 15 20.5 mΩ Dynamic characteristics QGD gate-drain charge - 11.8 16.5 nC QG(tot) total gate charge VGS = 10 V; ID = 30 A; VDS = 50 V; Fig. 15; Fig. 16 - 41 57.4 nC |
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