PSMN020-100YS_15 datasheet(1/14 Pages) PHILIPS

Part #	PSMN020-100YS

Description	N-channel 100V 20.5m廓 standard level MOSFET in LFPAK

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PSMN020-100YS

N-channel 100V 20.5mΩ standard level MOSFET in LFPAK

26 March 2014

Product data sheet

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1. General description

Standard level N-channel MOSFET in LFPAK package qualified to 175 °C. This product

is designed and qualified for use in a wide range of industrial, communications and

domestic equipment.

2. Features and benefits

• Advanced TrenchMOS provides low RDSon and low gate charge

• High efficiency gains in switching power converters

• Improved mechanical and thermal characteristics

• LFPAK provides maximum power density in a Power SO8 package

3. Applications

• DC-to-DC converters

• Lithium-ion battery protection

• Load switching

• Motor control

• Server power supplies

4. Quick reference data

Table 1.

Quick reference data

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

VDS

drain-source voltage

Tj ≥ 25 °C; Tj ≤ 175 °C

-

100

V

ID

drain current

Tmb = 25 °C; VGS = 10 V; Fig. 2

-

43

A

Ptot

total power dissipation Tmb = 25 °C; Fig. 1

-

106

W

Tj

junction temperature

-55

-

175

°C

Static characteristics

VGS = 10 V; ID = 15 A; Tj = 100 °C;

Fig. 13

-

37

mΩ

RDSon

drain-source on-state

resistance

VGS = 10 V; ID = 15 A; Tj = 25 °C;

Fig. 14

-

15

20.5

mΩ

Dynamic characteristics

QGD

gate-drain charge

-

11.8

16.5

nC

QG(tot)

total gate charge

VGS = 10 V; ID = 30 A; VDS = 50 V;

Fig. 15; Fig. 16

-

41

57.4

nC

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PSMN020-100YS Datasheet(PDF) 1 Page - NXP Semiconductors

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