PSMN9R5-100PS_15 datasheet(6/13 Pages) PHILIPS

Part #	PSMN9R5-100PS

Description	N-channel 100 V 9.6 m廓 standard level MOSFET in T0220

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NXP Semiconductors

PSMN9R5-100PS

N-channel 100 V 9.6 mΩ standard level MOSFET in T0220

PSMN9R5-100PS

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Product data sheet

17 October 2013

6 / 13

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Crss

reverse transfer

capacitance

-

185

-

pF

td(on)

turn-on delay time

-

22

-

ns

tr

rise time

-

25.2

-

ns

td(off)

turn-off delay time

-

52.2

-

ns

tf

fall time

VDS = 50 V; RL = 0.8 Ω; VGS = 10 V;

RG(ext) = 4.7 Ω; Tj = 25 °C

-

22.8

-

ns

Source-drain diode

VSD

source-drain voltage

IS = 15 A; VGS = 0 V; Tj = 25 °C; Fig. 17

-

0.85

1.2

V

trr

reverse recovery time

-

61.5

-

ns

Qr

recovered charge

IS = 20 A; dIS/dt = 100 A/µs; VGS = 0 V;

VDS = 50 V

-

157

-

nC

003aae025

6

12

18

24

30

4

8

12

16

20

VGS(V)

RDSon

(mΩ)

Fig. 5. Drain-source on-state resistance as a function

of gate-source voltage; typical values.

003aae022

0

2000

4000

6000

8000

0

3

6

9

12

VGS (V)

C

(pF)

Ciss

Crss

Fig. 6. Input and reverse transfer capacitances as a

function of gate-source voltage; typical values

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NXP Semiconductors	PSMN9R5-100PS	249Kb / 14P	N-channel 100 V 9.6 m廓 standard level MOSFET in T0220 Rev. 02-23 February 2010
Nexperia B.V. All right...	PSMN9R5-100PS	742Kb / 13P	N-channel 100 V 9.6 mΩ standard level MOSFET in T0220 17 October 2013

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Nexperia B.V. All right...	PSMN9R5-100PS	742Kb / 13P	N-channel 100 V 9.6 mΩ standard level MOSFET in T0220 17 October 2013
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PSMN9R5-100PS Datasheet(PDF) 6 Page - NXP Semiconductors

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