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PSMN7R0-100PS Datasheet(PDF) 1 Page - NXP Semiconductors

Part # PSMN7R0-100PS
Description  N-channel 100V 6.8 m廓 standard level MOSFET in TO220.
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Manufacturer  PHILIPS [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

PSMN7R0-100PS Datasheet(HTML) 1 Page - NXP Semiconductors

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PSMN7R0-100PS
N-channel 100V 6.8 mΩ standard level MOSFET in TO220.
17 October 2013
Product data sheet
Scan or click this QR code to view the latest information for this product
1. General description
Standard level N-channel MOSFET in TO220 package qualified to 175C. This product
is designed and qualified for use in a wide range of industrial, communications and
domestic equipment.
2. Features and benefits
High efficiency due to low switching and conduction losses
Improved dynamic avalanche performance
Suitable for standard level gate drive
3. Applications
DC-to-DC converters
Load switching
Motor control
Server power supplies
4. Quick reference data
Table 1.
Quick reference data
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VDS
drain-source voltage
Tj ≥ 25 °C; Tj ≤ 175 °C
-
-
100
V
ID
drain current
Tmb = 25 °C; VGS = 10 V; Fig. 1
[1]
-
-
100
A
Ptot
total power dissipation Tmb = 25 °C; Fig. 2
-
-
269
W
Tj
junction temperature
-55
-
175
°C
Static characteristics
VGS = 10 V; ID = 15 A; Tj = 100 °C;
Fig. 12
-
-
12
RDSon
drain-source on-state
resistance
VGS = 10 V; ID = 15 A; Tj = 25 °C;
Fig. 13
-
5.4
6.8
Dynamic characteristics
QGD
gate-drain charge
VGS = 10 V; ID = 25 A; VDS = 50 V;
Fig. 15; Fig. 14
-
36
-
nC
QG(tot)
total gate charge
VGS = 10 V; ID = 25 A; VDS = 50 V;
Fig. 14; Fig. 15
-
125
-
nC


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