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DAC161P997 Datasheet(PDF) 7 Page - Texas Instruments |
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DAC161P997 Datasheet(HTML) 7 Page - Texas Instruments |
7 / 39 page THD TH1 TP pri_tx: ³0´ pri_tx: ³1´ pri_tx: ³'´ ACKB: ³$´ TP TB TH0 TA DAC161P997 www.ti.com SNAS515G – JULY 2011 – REVISED DECEMBER 2014 Electrical Characteristics (continued) Unless otherwise noted, these specifications apply for VA = VD = 2.7 V to 3.6 V, TA = 25°C, external bipolar transistor: 2N3904, RE = 22Ω, C1 = C2 = C3 = 2.2 nF. PARAMETER TEST CONDITIONS MIN TYP MAX UNIT Leakage current when output device ACKB is off 1 -40 to 105°C IOZ µA Leakage current when output device ERRB is off 1 -40 to 105°C 6.6 Timing Requirements MIN NOM MAX UNIT SWIF TIMING, INTERNAL TIMER Symbol rate: 1/TP 0.3 19.2 kHz “D” symbol duty cycle: THD/TP 7/16 1/2 9/16 “0” symbol duty cycle: TH0/TP 3/16 1/4 5/16 "1” symbol duty cycle: TH1/TP 11/16 3/4 13/16 ACKB assert: TA/TP 1/16 1/4 4/8 ACKB deassert: TB/TP 12/8 7/4 31/16 TM Timeout PeriodM 90 100 110 ms Figure 1. Single-Wire Interface (SWIF) Timing Diagram Copyright © 2011–2014, Texas Instruments Incorporated Submit Documentation Feedback 7 Product Folder Links: DAC161P997 |
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