PSMN6R3-120PS_15 datasheet(3/12 Pages) PHILIPS

Part #	PSMN6R3-120PS

Description	N-channel 120 V 6.7 m廓 standard level MOSFET in TO-220

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NXP Semiconductors

PSMN6R3-120PS

N-channel 120 V 6.7 mΩ standard level MOSFET in TO-220

PSMN6R3-120PS

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Product data sheet

7 June 2013

3 / 12

Symbol

Parameter

Conditions

Min

Max

Unit

ISM

peak source current

pulsed; tp ≤ 10 µs; Tmb = 25 °C

-

280

A

Avalanche ruggedness

EDS(AL)S

non-repetitive drain-source

avalanche energy

VGS = 10 V; Tj(init) = 25 °C; ID = 70 A;

Vsup ≤ 120 V; unclamped; RGS = 50 Ω;

Fig. 3

-

532

mJ

003aaj851

0

30

60

90

120

150

180

0

20

40

60

80

Tj (°C)

ID

(A)

Fig. 1. Continuous drain current as a function of

mounting base temperature

Tmb (°C)

0

200

150

50

100

03aa16

40

80

120

Pder

(%)

0

Fig. 2. Normalized total power dissipation as a

function of mounting base temperature

003aaj852

10-3

10-2

10-1

1

10

1

10

102

tAL (ms)

IAL

(A)

(1)

(2)

Fig. 3. Single-pulse and repetitive avalanche rating; avalanche current as a function of avalanche time

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PSMN6R3-120PS Datasheet(PDF) 3 Page - NXP Semiconductors

PSMN6R3-120PS Datasheet(HTML) 3 Page - NXP Semiconductors

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