PSMN4R8-100PSE_15 datasheet(2/13 Pages) PHILIPS

Part #	PSMN4R8-100PSE

Description	N-channel 100 V 5 m廓 standard level MOSFET with improved SOA in TO220 package

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NXP Semiconductors

PSMN4R8-100PSE

N-channel 100 V 5 mΩ standard level MOSFET with improved SOA in

TO220 package

PSMN4R8-100PSE

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Product data sheet

11 July 2014

2 / 13

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Avalanche ruggedness

EDS(AL)S

non-repetitive drain-

source avalanche

energy

VGS = 10 V; Tj(init) = 25 °C; ID = 120 A;

Vsup ≤ 100 V; RGS = 50 Ω; unclamped;

Fig. 4

-

542

mJ

5. Pinning information

Table 2.

Pinning information

Symbol Description

Simplified outline

Graphic symbol

1

G

gate

2

D

drain

3

S

source

mb

D

mounting base; connected to

drain

1 2

mb

3

TO-220AB (SOT78)

S

D

G

mbb076

6. Ordering information

Table 3.

Ordering information

Package

Type number

Name

Description

Version

PSMN4R8-100PSE

TO-220AB

plastic single-ended package; heatsink mounted; 1 mounting

hole; 3-lead TO-220AB

SOT78

7. Marking

Table 4.

Marking codes

Type number

Marking code

PSMN4R8-100PSE

8. Limiting values

Table 5.

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit

VDS

drain-source voltage

Tj ≥ 25 °C; Tj ≤ 175 °C

-

100

V

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