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PSMN4R8-100PSE Datasheet(PDF) 2 Page - NXP Semiconductors |
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PSMN4R8-100PSE Datasheet(HTML) 2 Page - NXP Semiconductors |
2 / 13 page NXP Semiconductors PSMN4R8-100PSE N-channel 100 V 5 mΩ standard level MOSFET with improved SOA in TO220 package PSMN4R8-100PSE All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved Product data sheet 11 July 2014 2 / 13 Symbol Parameter Conditions Min Typ Max Unit Avalanche ruggedness EDS(AL)S non-repetitive drain- source avalanche energy VGS = 10 V; Tj(init) = 25 °C; ID = 120 A; Vsup ≤ 100 V; RGS = 50 Ω; unclamped; Fig. 4 - - 542 mJ 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 G gate 2 D drain 3 S source mb D mounting base; connected to drain 1 2 mb 3 TO-220AB (SOT78) S D G mbb076 6. Ordering information Table 3. Ordering information Package Type number Name Description Version PSMN4R8-100PSE TO-220AB plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB SOT78 7. Marking Table 4. Marking codes Type number Marking code PSMN4R8-100PSE PSMN4R8-100PSE 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C - 100 V |
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Similar Description - PSMN4R8-100PSE_15 |
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