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BF1214 Datasheet(PDF) 3 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
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BF1214 Datasheet(HTML) 3 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
3 / 18 page BF1214_1 © NXP B.V. 2007. All rights reserved. Product data sheet Rev. 01 — 30 October 2007 3 of 18 NXP Semiconductors BF1214 Dual N-channel dual gate MOSFET 4. Marking 5. Limiting values [1] Tsp is the temperature at the soldering point of the source lead. Table 4. Marking Type number Marking Description BF1214 SB* * = p : made in Hong Kong * = t : made in Malaysia * = w : made in China Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit Per MOSFET VDS drain-source voltage DC - 6 V ID drain current DC - 30 mA IG1 gate1 current - ±10 mA IG2 gate2 current - ±10 mA Ptot total power dissipation Tsp ≤ 107 °C [1] - 180 mW Tstg storage temperature −65 +150 °C Tj junction temperature - 150 °C Fig 1. Power derating curve Tsp (˚C) 0 200 150 50 100 001aac193 100 150 50 200 250 Ptot (mW) 0 |
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