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BF1206F Datasheet(PDF) 7 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
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BF1206F Datasheet(HTML) 7 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
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7 / 17 page  BF1206F_1 © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Product data sheet Rev. 01 — 30 January 2006 7 of 20 Philips Semiconductors BF1206F Dual N-channel dual gate MOSFET (1) RG1 = 100 kΩ. (2) RG1 = 120 kΩ. (3) RG1 = 150 kΩ. (4) RG1 = 180 kΩ. (5) RG1 = 220 kΩ. (6) RG1 = 270 kΩ. (7) RG1 = 330 kΩ. (8) RG1 = 390 kΩ. (9) RG1 = 470 kΩ. VG2-S = 2.5 V; Tj =25 °C; see Figure 32. (1) VGG = 1.0 V (2) VGG = 1.5 V (3) VGG = 2.0 V (4) VGG = 2.5 V (5) VGG = 3.0 V Tj =25 °C; RG1(A) = 270 kΩ (connected to VGG); see Figure 32. Fig 8. Amplifier A: drain current as a function of VDS and VGG; typical values Fig 9. Amplifier A: drain current as a function of gate2 voltage; typical values VGG = VDS (V) 04 3 12 001aad902 4 6 2 8 10 ID (mA) 0 (1) (2) (3) (4) (5) (6) (7) (8) (9) VG2−S (V) 04 3 12 001aad903 2 4 6 ID (mA) 0 (1) (2) (3) (4) (5) |
Similar Part No. - BF1206F_15 |
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Similar Description - BF1206F_15 |
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