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PSMN1R4-30YLD Datasheet(PDF) 1 Page - NXP Semiconductors

Part # PSMN1R4-30YLD
Description  N-channel 30 V, 1.4 m廓 logic level MOSFET in LFPAK56 using NextPowerS3 Technology
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Manufacturer  PHILIPS [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

PSMN1R4-30YLD Datasheet(HTML) 1 Page - NXP Semiconductors

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PSMN1R4-30YLD
N-channel 30 V, 1.4 mΩ logic level MOSFET in LFPAK56
using NextPowerS3 Technology
30 May 2014
Product data sheet
Scan or click this QR code to view the latest information for this product
1. General description
Logic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package.
NextPowerS3 portfolio utilising NXP’s unique “SchottkyPlus” technology delivers
high efficiency, low spiking performance usually associated with MOSFETs with an
integrated Schottky or Schottky-like diode but without problematic high leakage current.
NextPowerS3 is particularly suited to high efficiency applications at high switching
frequencies.
2. Features and benefits
Ultra low QG, QGD and QOSS for high system efficiency, especially at higher switching
frequencies
Superfast switching with soft-recovery; s-factor > 1
Low spiking and ringing for low EMI designs
Unique “SchottkyPlus” technology; Schottky-like performance with < 1 µA leakage at
25 °C
Optimised for 4.5 V gate drive
Low parasitic inductance and resistance
High reliability clip bonded and solder die attach Power SO8 package; no glue, no
wire bonds, qualified to 175 °C
Wave solderable; exposed leads for optimal visual solder inspection
3. Applications
On-board DC-to-DC solutions for server and telecommunications
Secondary-side synchronous rectification in telecommunication applications
Voltage regulator modules (VRM)
Point-of-Load (POL) modules
Power delivery for V-core, ASIC, DDR, GPU, VGA and system components
Brushed and brushless motor control
Power OR-ing
4. Quick reference data
Table 1.
Quick reference data
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VDS
drain-source voltage
25 °C ≤ Tj ≤ 175 °C
-
-
30
V
ID
drain current
Tmb = 25 °C; VGS = 10 V; Fig. 2
[1]
-
-
100
A
Ptot
total power dissipation Tmb = 25 °C; Fig. 1
-
-
166
W


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