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PSMN1R1-30EL Datasheet(PDF) 7 Page - NXP Semiconductors |
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PSMN1R1-30EL Datasheet(HTML) 7 Page - NXP Semiconductors |
7 / 13 page NXP Semiconductors PSMN1R1-30EL N-channel 30 V 1.3 mΩ logic level MOSFET in I2PAK PSMN1R1-30EL All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved Product data sheet 2 April 2014 7 / 13 003aaf764 0 1 2 3 4 5 0 4 8 12 16 VGS(V) RDSon (mΩ) Fig. 7. Drain-source on-state resistance as a function of gate-source voltage; typical values 003aad011 0 50 100 150 200 250 300 0 2 4 6 8 10 VDS (V) ID (A) 3.5 3 4.5 2.8 2.6 VGS (V) = 2.4 10 Fig. 8. Output characteristics: drain current as a function of drain-source voltage; typical values 003aaf766 103 104 105 10-1 1 10 102 VGS(V) C (pF) Ciss Crss Fig. 9. Input and reverse transfer capacitances as a function of gate-source voltage; typical values 003aab271 10-6 10-5 10-4 10-3 10-2 10-1 0 1 2 3 VGS (V) ID (A) max typ min Fig. 10. Sub-threshold drain current as a function of gate-source voltage |
Similar Part No. - PSMN1R1-30EL_15 |
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