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PNS40010ER Datasheet(PDF) 3 Page - NXP Semiconductors

Part # PNS40010ER
Description  400 V, 1 A high power density, standard switching time PN-rectifier
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Manufacturer  PHILIPS [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

PNS40010ER Datasheet(HTML) 3 Page - NXP Semiconductors

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PNS40010ER
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 2 — 21 August 2012
3 of 14
NXP Semiconductors
PNS40010ER
400 V, 1 A high power density, standard switching time PN-rectifier
5.
Limiting values
[1]
Device mounted on a ceramic Printed-Circuit Board (PCB), Al2O3, standard footprint.
[2]
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[3]
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2.
[4]
Device mounted on a ceramic PCB, AI2O3, standard footprint.
6.
Thermal characteristics
[1]
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2]
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2.
[3]
Device mounted on an FR4 PCB, AI2O3, standard footprint.
[4]
Soldering point of cathode tab.
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
VRRM
repetitive peak reverse voltage
-
400
V
VR
reverse voltage
-
400
V
VRMS
RMS voltage
-
280
V
IF
forward current
Tsp ≤ 160 °C
-
1.4
A
IF(AV)
average forward current
δ = 0.5 ; f = 20 kHz; square wave;
Tamb ≤ 115 °C
[1]
-1
A
δ = 0.5 ; f = 20 kHz; Tsp ≤ 170 °C;
square wave
-1
A
IFSM
non-repetitive peak forward
current
square wave; Tj(init) =25°C; tp =8ms
-
32
A
Ptot
total power dissipation
Tamb ≤ 25 °C
[2]
-
750
mW
[3]
-
1300
mW
[4]
-
2300
mW
Tj
junction temperature
-
175
°C
Tamb
ambient temperature
-55
175
°C
Tstg
storage temperature
-65
175
°C
Table 6.
Thermal characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Rth(j-a)
thermal resistance
from junction to
ambient
in free air
[1]
-
-
200
K/W
[2]
--115
K/W
[3]
--65
K/W
Rth(j-sp)
thermal resistance
from junction to solder
point
[4]
--15
K/W


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