CHA2260-QAG

Ref. : DSCHA2260-QAG3150 - 30 May 13

1/14

Specifications subject to change without notice

United Monolithic Semiconductors S.A.S.

Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France

Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34

18-27GHz Low Noise Amplifier

GaAs Monolithic Microwave IC in SMD leadless package

Description

The CHA2260-QAG is a low noise amplifier

monolithic circuit, which integrates 3-stages

self biased.

It

is

designed

for

a

wide

range

of

applications, from military to commercial

communication systems.

The circuit is manufactured with a pHEMT

process, 0.25µm gate length.

It is supplied in RoHS compliant SMD

package.

Main Features

Noise Figure

■ Broadband performance: 18-27GHz

■ 26dB Gain

■ 2.2dB Noise Figure

■ 13dBm Pout

■ 23dBm Output IP3

■ DC bias: Vd=3.5Volt@Id=65mA

■ 16L-QFN3x3

■ MSL1

Main Electrical Characteristics

Tamb.= +25°C

Symbol

Parameter

Min

Typ

Max

Unit

Freq

Frequency range

18

27

GHz

Gain

Linear Gain

26

dB

NF

Noise Figure

2.2

dB

Pout

Output Power @1dB comp.

13

dBm

1.2

1.4

1.6

1.8

2

2.2

2.4

2.6

2.8

3

3.2

20

21

22

23

24

25

26

27

28

29

30

Frequency (GHz)

3.0 V

3.5 V

UMS

A2260

YYWW

UMS

A3667A

YYWWG

UMS

A3667A

YYWWG

UMS

A3688A

YYWWG

UMS

A3667A

YYWWG

UMS

A3667A

YYWWG

UMS

A3688A

YYWWG

UMS

A3667A

YYWWG

UMS

A3667A

YYWWG

UMS

A3688A

YYWWG

UMS

A3667A

YYWWG

UMS

A3667A

YYWWG

UMS

A3688A

YYWWG