PMEG4010EPK_15 datasheet(5/14 Pages) PHILIPS

Part #	PMEG4010EPK

Description	40 V, 1 A low VF MEGA Schottky barrier rectifier

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Manufacturer	PHILIPS [NXP Semiconductors]

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PMEG4010EPK

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Product data sheet

Rev. 2 — 6 March 2012

5 of 14

NXP Semiconductors

PMEG4010EPK

40 V, 1 A low VF MEGA Schottky barrier rectifier

7.

Characteristics

Ceramic PCB, Al2O3, standard footprint

Fig 4.

Transient thermal impedance from junction to ambient as a function of pulse duration; typical values

006aac999

tp (s)

10-3

102

103

10

1

10-2

10-1

102

Zth(j-a)

(K/W)

10

duty cycle =

1

0.75

0.5

0.33

0.25

0.2

0.1

0.02

0.01

0

0.05

Table 7.

Characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

VF

forward voltage

IF = 100 mA; pulsed; tp ≤ 300 µs;

δ≤ 0.02; Tj =25 °C

-

345

390

mV

IF = 500 mA; pulsed; tp ≤ 300 µs;

δ≤ 0.02; Tj =25 °C

-

440

500

mV

IF = 700 mA; pulsed; tp ≤ 300 µs;

δ≤ 0.02; Tj =25 °C

-

480

550

mV

IF = 1 A; pulsed; tp ≤ 300 µs; δ≤ 0.02;

Tj =25°C

-

540

600

mV

IR

reverse current

VR =10V; Tj = 25 °C

-

0.6

4

µA

VR =40V; Tj =25 °C

-

3

20

µA

Cd

diode capacitance

VR = 1 V; f = 1 MHz; Tj = 25 °C

-

50

60

pF

VR =10V; f=1MHz; Tj = 25 °C

-

20

25

pF

trr

reverse recovery time

IF = 0.5 A; IR = 0.5 A; IR(meas) =0.1 A;

Tj =25°C

-3

-ns

VFRM

peak forward recovery

voltage

IF = 0.5 A; dIF/dt = 20 A/µs; Tj = 25 °C

-

460

-

mV

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