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DRV8308 Datasheet(PDF) 9 Page - Texas Instruments |
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DRV8308 Datasheet(HTML) 9 Page - Texas Instruments |
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9 / 60 page  DRV8308 www.ti.com SLVSCF7A – FEBRUARY 2014 – REVISED OCTOBER 2014 Electrical Characteristics (continued) over operating free-air temperature range (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT MOSFET DRIVERS VOUTH High-side gate drive output voltage IO = 100 μA, VM ≥ 12V VM + 10 V VOUTL Low-side gate drive output voltage IO = 100 μA 10 V IDRIVE = 000 10 IDRIVE = 001 20 IDRIVE = 010 30 IDRIVE = 011 50 IOUT Peak gate drive current mA IDRIVE = 100 90 IDRIVE = 101 100 IDRIVE = 110 110 IDRIVE = 111 130 CYCLE-BY-CYCLE CURRENT LIMITER Voltage limit across RISENSE for the current VLIMITER 0.225 0.25 0.275 V limiter OCPDEG = 00 2 OCPDEG = 01 3 Time that VLIMITER is ignored, from the start of tBLANK µs the PWM cycle OCPDEG = 10 3.75 OCPDEG = 11 6 PROTECTION CIRCUITS Voltage limit across RISENSE for overcurrent VSENSEOCP 1.7 1.8 1.9 V protection OCPTH = 00 200 250 400 OCPTH = 01 400 500 600 Voltage limit across each external FET’s drain VFETOCP mV to source for overcurrent protection OCPTH = 10 600 750 850 OCPTH = 11 850 1000 1200 OCPDEG = 00 1.6 OCPDEG = 01 2.3 Deglitch time for VSENSEOCP or VFETOCP to tOCP µs trigger OCPDEG = 10 3 OCPDEG = 11 5 VM rising 8 VUVLO VM undervoltage lockout V VM falling 7.8 VM rising, OVTH = 0 32 34.5 36 VOVLO VM overvoltage lockout V VM rising, OVTH = 1 28 29 tRETRY Fault retry time after RLOCK or OTS RETRY = 1 5 s TTSD Thermal shutdown die temperature 150 160 °C LRTIME = 00 1 LRTIME = 01 3 tLOCK Locked rotor detect time s LRTIME = 10 5 LRTIME = 11 10 VCPFAIL VCP failure threshold (CPFAIL bit) VM + 3 V Copyright © 2014, Texas Instruments Incorporated Submit Documentation Feedback 9 Product Folder Links: DRV8308 |
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