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CHA7012 Datasheet(PDF) 1 Page - United Monolithic Semiconductors

Part # CHA7012
Description  X-band HBT High Power Amplifier
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Manufacturer  UMS [United Monolithic Semiconductors]
Direct Link  http://www.ums-gaas.com
Logo UMS - United Monolithic Semiconductors

CHA7012 Datasheet(HTML) 1 Page - United Monolithic Semiconductors

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CHA7012
RoHS COMPLIANT
Ref. : DSCHA70129082- 23 March 09
1/10
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France
Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
X-band HBT High Power Amplifier
GaAs Monolithic Microwave IC
Description
The CHA7012 chip is a monolithic two-stage
GaAs high power amplifier designed for X band
applications.
This device is manufactured using a GaInP
HBT process, including, via holes through the
substrate and air bridge. A nitride layer protects
the transistors and the passive components.
Special
heat
removal
techniques
are
implemented to guarantee high reliability.
To simplify the assembly process:
-the backside of the chip is both RF and DC
grounded
-bond pads and back side are gold plated for
compatibility with eutectic die attach method
and
thermosonic
or
thermo
compression
bonding process.
Main Features
Frequency band: 9.2 -10.4GHz
Output power (P3dB ): 38.5dBm
High linear gain: > 20dB
High PAE: > 38%
Two biasing modes:
-VDigital control thanks to TTL interface
-VAnalog control thanks to biasing circuit
Chip size: 5.00 x 3.68 x 0.1mm
Main Characteristics
Vc=7.5V, Ic (Quiescent) = 1.9A, Pulse width=100µs, Duty cycle = 20%
Symbol
Parameter
Min
Typ
Max
Unit
Fop
Operating frequency range
9.2
10.4
GHz
Psat
Saturated output power @ 25°C
9
W
P_3dBc
Output power @ 3dBc @ 25°C
7
W
G
Small signal gain @ 25°C
20
dB
Top
Operating temperature range
-40
+80
°C
ESD Protections: Electrostatic discharge sensitive device. Observe handling precautions!
16
20
24
28
32
36
40
44
9
9.2
9.4
9.6
9.8
10
10.2
10.4
10.6
Frequency ( GHz)
Linear Gain (Pin=0dBm)
PAE@3dBc (%)
Pout@3dBc(dBm
Pout & PAE @3dBc and Linear Gain @ 25°C
IN
OUT
TI
Vc
Biasing
Circuit
Vctrl
TTL
Circuit
TO
Vc
Vc
Vctrl
TO
Vc
Vc
TI
Vc
Biasing
Circuit
TTL
Circuit
IN
OUT
TI
Vc
Biasing
Circuit
Vctrl
TTL
Circuit
TO
Vc
Vc
Vctrl
TO
Vc
Vc
TI
Vc
Biasing
Circuit
TTL
Circuit


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